首页 >INA338AIDGSR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HCMOS3.2x2.5mm3.3VSMDOscillator | FOX Fox Electronics | FOX | ||
HCMOS3.2x2.5mm3.3VSMDOscillator | FOX Fox Electronics | FOX | ||
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–1.6A,–20V.RDS(ON)=115mW@VGS=–4.5V RDS(ON)=155mW@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-Channel20-V(D-S)MOSFET GeneralFEATURE ●TrenchFETPowerMOSFET ●Leadfreeproductisacquired ●Surfacemountpackage APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
P-Channel20-V(D-S)MOSFET Application ●Load/PowerSwitching ●InterfacingSwitching ●LogicLevelShift | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
SOT-23Plastic-EncapsulateMOSFETS FEATURE TrenchFETPowerMOSFET | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription ThisP-Channel2.5VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ·–1.6A,–20V.RDS(ON)=115mW@VGS=–4.5V RDS(ON)=155mW@VGS= | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
20VP-ChannelEnhancementModeMOSFET VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-1.6A=115mΩ RDS(ON),Vgs@-2.5V,Ids@-1.3A=155mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
P-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
HCMOS3.3V32.768kHzSMDOscillator | FOX Fox Electronics | FOX | ||
SAWResonator-RemoteControl | TEMEX TEMEX | TEMEX | ||
TheGBC338isdesignedfordriveandoutput-stagesofaudioamplifiers | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
NPNSILICONTRANSISTOR Description TheGBC338isdesignedfordriveandoutput-stagesofaudioamplifiers. Features •HighDCCurrentGain:100~630@VCE=1V,IC=100mA •ComplementarytoGBC328 | GTM 勤益投資控股股份有限公司 | GTM | ||
ALFATSDBoard | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
Incrementalencoders | IVOBaomeng Electronics (Shanghai) Co., Ltd 堡盟电子堡盟电子（上海）有限公司 | IVO | ||
ConventionalMDCMobileRadioVersatility&SophisticationontheMove | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
HighFrequencyFundamental3.2x2.5mmSMCrystal | GOLLEDGEGolledge Electronics Ltd 高利电子高利电子有限公司 | GOLLEDGE | ||
GaAsMMICSUB-HARMONICALLYPUMPEDMIXER,26-33GHz | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
GeneralPurposeApplications GeneralDescription TheHMC338chipisageneralpurposesub-harmonicallypumped(x2)MMICmixerwithanintegratedLOamplifierwhichcanbeusedasanupconverterordownconverterinthe26to33GHzfrequencyrange.ThechiputilizesaGaAsPHEMTtechnologythatresultsinasmalloverallchi | MICROSS MICROSS | MICROSS | ||
GaAsMMICSUB-HARMONICALLYPUMPEDMIXER,26-33GHz | Hittite HITTITE | Hittite |
详细参数
- 型号：
INA338AIDGSR
- 功能描述：
仪表放大器 Wide-Temperature Precision w/Shutdown
- RoHS：
否
- 制造商：
Texas Instruments
- 输入补偿电压：
150 V
- 最大输入电阻：
10 kOhms
- 共模抑制比（最小值）：
88 dB
- 工作电源电压：
2.7 V to 36 V
- 电源电流：
200 uA
- 最大工作温度：
+ 125 C
- 最小工作温度：
- 40 C
- 封装/箱体：
MSOP-8
- 封装：
Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
23+ |
MSOP10 |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
TI(德州仪器) |
23+ |
MSOP10 |
12316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
TI/TEXAS |
23+ |
原厂封装 |
8931 |
询价 | |||
TexasInstruments |
18+ |
ICOPAMPINSTR1KHZSGL10MSO |
6580 |
公司原装现货/欢迎来电咨询! |
询价 | ||
TexasInstruments |
10-VSSOP |
16500 |
绝对原装正品!假一罚十!放大器专业分销商! |
询价 | |||
Texas Instruments |
21+ |
10-VSSOP |
53200 |
一级代理/放心采购 |
询价 | ||
TI |
20+ |
SSOP-10 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Texas |
21+ |
NA |
4185 |
原装热卖可订货 |
询价 | ||
TI |
22+ |
10VSSOP |
9000 |
原厂渠道,现货配单 |
询价 | ||
TI |
21+ |
10VSSOP |
13880 |
公司只售原装,支持实单 |
询价 |
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