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BCR149F

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BCR149T

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BFQ149

PNP5GHzwidebandtransistor

DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ149

PNP5GHzwidebandtransistor

DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFQ149

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BLC149

BLC149

BellingSHANGHAI BELLING CO., LTD.

上海贝岭上海贝岭股份有限公司

BSP149

SIPMOSSmall-SignalTransistor(NchannelDepletionmodeHighdynamicresistance)

●VDS200V ●ID0.48A ●RDS(on)3.5Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BSP149

SIPMOSSmall-Signal-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BSP149

SIPMOSSmall-Signal-Transistor

Features •N-channel •Depletionmode •dv/dtrated •AvailablewithVGS(th)indicatoronreel •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BSP149

N-ChannelEnhancementModePowerMOSFET

GENERALFEATURES Vos=200V Ib=10A@Ves=10V Rosion)£1.35Q@Ves=10V SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

BSS149

SIPMOSSmall-SignalTransistor(NchannelDepletionmodeHighdynamicresistance)

SIPMOS®Small-SignalTransistor ●VDS200V ●ID0.35A ●RDS(on)3.5Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BT149

Thyristorslogiclevel

GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BT149B

Thyristorslogiclevel

GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BT149D

Thyristorslogiclevel

GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BT149D

SCR

WEENWeEn Semiconductors

瑞能半导体瑞能半导体科技股份有限公司

BT149E

Thyristorslogiclevel

GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BT149G

Thyristorslogiclevel

GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BT149G

SCR

WEENWeEn Semiconductors

瑞能半导体瑞能半导体科技股份有限公司

BTS149

SmartLowsidePowerSwitch

GeneralDescription NchannelverticalpowerFETinSmartSIPMOS®chiponchiptechnology.Fullyprotectedbyembeddedprotectedfunctions. Features •LogicLevelInput •InputProtection(ESD) •Thermalshutdownwithlatch •Overloadprotection •Shortcircuitprotection •Overvoltagepro

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

C-149A-DFB-PB-S

CWDMSeriesLaserDiodeModule(18channel)

SOURCE

SourceBoost Technologies

详细参数

  • 型号:

    INA149

  • 制造商:

    TI

  • 制造商全称:

    Texas Instruments

  • 功能描述:

    High Common-Mode Voltage Difference Amplifier

供应商型号品牌批号封装库存备注价格
TI(德州仪器)
23+
标准封装
8048
原厂直销,大量现货库存,交期快。价格优,支持账期
询价
TI德州仪器
22+
SOP-8
24000
原装正品现货,实单可谈,量大价优
询价
TI
SOIC|8
70230
16余年资质 绝对原盒原盘 更多数量
询价
TI
500
询价
TI
SOP8
10000
正品原装--自家现货-实单可谈
询价
TI
16+
NA
8800
原装现货,货真价优
询价
TI
2339+
SOP-8
5598
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
TI
2016+
SOP-8
3000
主营TI,绝对原装,假一赔十,可开17%增值税发票!
询价
TI/BB
24+
SOP8
5000
全现原装公司现货
询价
TI
1702+
SOP-8
8600
只做原装进口,假一罚十
询价
更多INA149供应商 更新时间2024-6-8 22:59:00