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IRFY430C

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY430CM

POWERMOSFETN-CHANNEL(BVdss=500V,Rd(on)=1.5ohm,Id=4.5A)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFY430M

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRGB430

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB430U

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP430U

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRK.430

SUPERMAGN-A-pak-TMPowerModules

Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRK430

SUPERMAGN-A-PAK??PowerModules

IRFInternational Rectifier

英飞凌英飞凌科技公司

ISCNL430W

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXDD430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Integrated Circuits Division

IXDD430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Integrated Circuits Division

IXDD430CI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Integrated Circuits Division

IXDD430CI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Integrated Circuits Division

IXDD430MCI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Integrated Circuits Division

IXDD430MYI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Integrated Circuits Division

IXDD430YI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Integrated Circuits Division

IXDD430YI

30AmpLow-SideUltrafastMOSFET/IGBTDriver

IXYS

IXYS Integrated Circuits Division

IXDI430

30AmpLow-SideUltrafastMOSFET/IGBTDriver

GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IN430CM

  • 制造商:

    Hubbell Wiring Device-Kellems

  • 功能描述:

    PS, IEC, REPL, INTERIOR, 4W, 30A

供应商型号品牌批号封装库存备注价格
ST
23+
DIPSMD
16900
支持样品,原装现货,提供技术支持!
询价
ST
22+
DIPSMD
16900
支持样品 原装现货 提供技术支持!
询价
PHILIPS/飞利浦
NA
1724
专营CANCDIP
询价
N/A
4026
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
VISHAYMAS
22+23+
DO-35
51128
绝对原装正品现货,全新深圳原装进口现货
询价
N/A
21+
35200
一级代理/放心采购
询价
2021+
SOD-123
6430
原装现货/欢迎来电咨询
询价
N/A
最新
9165
原装正品 现货供应 价格优
询价
VISHAY/威世
21+
DO-35
30000
百域芯优势 实单必成 可开13点增值税
询价
N/A
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
更多IN430CM供应商 更新时间2024-5-31 16:34:00