IMT65R022M1H

MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features •Optimizedswitchingbehaviorathighercurrents •CommutationrobustfastbodydiodewithlowQf •Superiorgateoxidereliability •Tj,max=175°Candexcellentthermalbehavior •LowerRDS(on)andpulsecurrentdependencyontemperature •Increasedavalanchecapability •Compatib

IMT65R022M1H

SiC N-Channel MOSFET

FEATURES ·DrainCurrent-ID=79A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=42mΩ(Max)@VGS=20V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

IMT65R022M1HXUMA1

包装：管件 封装/外壳：8-PowerSFN 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SILICON CARBIDE MOSFET

IMBG65R022M1H

650VCoolSiC짧M1SiCTrenchPowerDevice