Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

• Automotive AEC Q101 qualified

• Designed for DC/AC converters for Automotive Application

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time 5s

• TrenchStop® and Fieldstop technology for 600 V applications offers :

    - very tight parameter distribution

    - high ruggedness, temperature stable behavior

    - very high switching speed

• Positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Green Package

• Very soft, fast recovery anti-parallel Emitter Controlled HE diode

IKW20N60TA属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技公司制造生产的IKW20N60TA晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。