Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode

Features

• VCE=1200 V

• IC=15 A

• IGBT co-packed with full current, soft and low Qrr diode

• Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C

• Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...)

• Short circuit ruggedness 8 μsec

• Wide range of dv/dt controllability

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications

• Industrial Drives

• Industrial Power Supplies

• Solar Inverters

Product validation

• Product Validation: Qualified for industrial applications according to the relevant tests of

JEDEC47/20/22

IKW15N120CS7属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技公司制造生产的IKW15N120CS7晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。