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IIPD600N25N3

N-Channel MOSFET Transistor

•DESCRITION •Highfrequencyswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤60mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB600N25N3

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB600N25N3G

OptiMOSTM3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB600N25N3G

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD600N25N3

N-ChannelMOSFETTransistor

•DESCRITION •Highfrequencyswitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤60mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD600N25N3G

OptiMOSTM3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI600N25N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI600N25N3G

OptiMOSTM3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP600N25N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP600N25N3G

OptiMOSTM3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP600N25N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Id

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP600N25N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP600N25N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
N/A
2023+
SOP8
50000
全新原装现货
询价
IR
22+
DIP
6000
终端可免费供样,支持BOM配单
询价
IR
23+
DIP
8000
只做原装现货
询价
IOR
23+24
SIP
9860
原厂原包装。终端BOM表可配单。可开13%增值税
询价
INFINEON
23+
NA
100
现货!就到京北通宇商城
询价
VISHAY
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
询价
VISHAY/威世
21+
TO-252
30000
只做正品原装现货
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ifm electronic
7162+
con
5
现货常备产品原装可到京北通宇商城查价格
询价
ST意法
20+
LGA12
17000
加速度计,只做全新原装
询价
更多IIPD600N25N3供应商 更新时间2024-6-5 10:37:00