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IHW30N60T

Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N60T

Soft Switching Series

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N60T

Positive temperature coefficient in VCE

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N60T_08

Soft Switching Series

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N60T_13

Positive temperature coefficient in VCE

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IHW30N60TFKSA1

包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 60A 187W TO247-3

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKW30N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AR30N60

ACTIVE/SYNCHRONOUSRECTIFIER

DIODESDiodes Incorporated

达尔科技

BIDW30N60T

BIDW30N60TInsulatedGateBipolarTransistor(IGBT)

GeneralInformation TheBourns®ModelBIDW30N60TIGBTdevicecombinestechnologyfromaMOSgate andabipolartransistorforanoptimumcomponentforhighvoltageandhighcurrent applications.ThisdeviceusesTrench-GateField-Stoptechnologyprovidinggreater controlofdynamiccharacteris

BournsBourns Inc.

伯恩斯(邦士)

DAM30N60C

N-ChannelEnhancementModeMOSFET

DACO

DACO

DAM30N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO

DAM30N60S

N-ChannelEnhancementModeMOSFET

DACO

DACO

FGA30N60LSD

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGA30N60LSDTU

MOSFETsandbipolartransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N60LSD

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N60LSDTU

Lowsaturationvoltage:VCE(sat)=1.1V@IC=30A

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGW30N60VD

DiscreteIGBT(High-SpeedVseries)600V/30A

FujiFUJI CORPORATION

株式会社FUJI

G30N60

600V,SMPSSeriesN-ChannelIGBT

TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G30N60

60A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G30N60

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    IHW30N60T

  • 功能描述:

    IGBT 晶体管 LOW LOSS DuoPack 600V 30A

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
标准封装
17048
原厂渠道供应,大量现货,原型号开票。
询价
INFINEON
21+
TO-247
4800
专营原装正品现货,当天发货,可开发票!
询价
英飞翎
17+
TO-247
31518
原装正品 可含税交易
询价
23+
5000
专业模块销售,欢迎咨询
询价
INFINEON
08+(pbfree)
PG-TO247-3
8866
询价
INFINEO
2020+
TO-247
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON
23+
TO247
8600
全新原装现货
询价
INF
16+
TO-3P
10000
全新原装现货
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINEON
22+23+
TO-247
34972
绝对原装正品全新进口深圳现货
询价
更多IHW30N60T供应商 更新时间2024-6-19 17:00:00