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21N50C3	文件：1.29179 Mbytes Page：12 Pages	NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
ISPP21N50C3	文件：338.99 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancea	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW21N50C3	文件：334.59 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA21N50C3	文件：756.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA21N50C3	文件：2.05204 Mbytes Page：14 Pages	NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA21N50C3	文件：341.43 Kbytes Page：13 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA21N50C3	文件：269.98 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPB21N50C3	文件：332.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPB21N50C3	文件：341.43 Kbytes Page：13 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB21N50C3	文件：1.29179 Mbytes Page：12 Pages	NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC)fortargetapplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI21N50C3	文件：355.64 Kbytes Page：3 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPI21N50C3	文件：756.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI21N50C3	文件：2.05204 Mbytes Page：14 Pages	NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI21N50C3	文件：341.43 Kbytes Page：13 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP21N50C3	文件：341.43 Kbytes Page：13 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP21N50C3	文件：756.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP21N50C3	文件：2.05204 Mbytes Page：14 Pages	NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPP21N50C3	文件：338.99 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancea	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPW21N50C3	文件：334.59 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPW21N50C3	文件：767.79 Kbytes Page：12 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	IF.SPW21N50C3	INFINEON	23+		8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IF.SPW21N50C3	INFINEON	23+		8000	专注配单,只做原装进口现货	询价
深圳市骏创达科技有限公司	IF-001	OMEGA	2308+		381751	一级代理,原装正品,公司现货!	询价
上海金庆电子技术有限公司	IF010600	YAMAHA	新		11	全新原装货期两周	询价
深圳市星佑电子有限公司	IF01389	CRYS	05+	原厂原装	4496	只做全新原装真实现货供应	询价
深圳市特顺芯科技有限公司	IF015	FDK	0025+	SOP	772		询价
上海专毅电子科技有限公司	IF015	FDK	17+	SMD	9800	只做全新进口原装,现货库存	询价
上海鑫科润电子科技有限公司	IF015	FDK	2000	SMD	613	原装现货海量库存欢迎咨询	询价
深圳市百视威讯电子科技有限公司	IF015		23+	N/A	45990	正品授权货源可靠	询价
京海半导体(深圳)有限公司	IF015	FDK	21+	NA	10000	原装现货假一罚十	询价

更多IF.SPW21N50C3供应商更新时间2024-4-29 15:01:00

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