IDT71V424L15YG资料使用说明书批发供应IDT-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IDT71V424L15YG	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15YGI	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L15PHG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L15PHG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L15PHGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L15PHGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L15YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
71V424L15YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L15YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V424L15YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15PHGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V424L15YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

详细参数

型号：
IDT71V424L15YG
功能描述：
IC SRAM 4MBIT 15NS 36SOJ
RoHS：
是
类别：
集成电路(IC) >> 存储器
系列：
-
标准包装：
2,000
系列：
MoBL® 格式 -
存储器：
RAM
存储器类型：
SRAM - 异步
存储容量：
16M（2M x 8，1M x 16）
速度：
45ns
接口：
并联
电源电压：
2.2 V ~ 3.6 V
工作温度：
-40°C ~ 85°C
封装/外壳：
48-VFBGA
供应商设备封装：
48-VFBGA（6x8）
包装：
带卷(TR)

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	IDT71V424L15YG	IDT	23+	36-SOJ	10150	专业分销产品!原装正品!价格优势!	询价
深圳市利加科技有限公司	IDT71V424L15YG	IDT	16+	NA	8800	原装现货,货真价优	询价
深圳市永贝尔科技有限公司	IDT71V424L15YG	IDT	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市昊创电子有限公司	IDT71V424L15YG	IDT	11+	SOJ36	1500	全新原装	询价
深圳市维尔达电子有限公司	IDT71V424L15YG	IDT	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市艾宇特电子科技有限公司	IDT71V424L15YG	IDT	2046+		9852	只做原装正品现货!或订货假一赔十!	询价
深圳市兴灿科技有限公司	IDT71V424L15YG	IDT	23+	36SOJ	4345	原装现货	询价
深圳市河锋鑫科技有限公司	IDT71V424L15YG	IDT	22+	36SOJ	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IDT71V424L15YG	IDT	21+	36SOJ	13880	公司只售原装,支持实单	询价
深圳市大联智电子有限公司	IDT71V424L15YG	IDT	2022+	现货	112	公司现货,优质代理商!	询价

更多IDT71V424L15YG供应商更新时间2024-4-30 11:26:00

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