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IDT71V016SA12Y

包装:托盘 封装/外壳:44-BSOJ(0.400",10.16mm 宽) 类别:集成电路(IC) 存储器 描述:IC SRAM 1MBIT PARALLEL 44SOJ

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V016SA12Y8

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V016SA12YI8

3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V016SA12YI

包装:管件 封装/外壳:44-BSOJ(0.400",10.16mm 宽) 类别:集成电路(IC) 存储器 描述:IC SRAM 1MBIT PARALLEL 44SOJ

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V016SA12YI8

包装:管件 封装/外壳:44-BSOJ(0.400",10.16mm 宽) 类别:集成电路(IC) 存储器 描述:IC SRAM 1MBIT PARALLEL 44SOJ

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12BF

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12BFG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12BFG

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA12BFGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12BFGI

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA12BFI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12PHG

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA12PHGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12PHGI

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA12YG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V016SA12YG

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA12YGI

3.3VCMOSStaticRAM

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V016SA12YGI

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Features ◆64Kx16advancedhigh-speedCMOSStaticRAM ◆Equalaccessandcycletimes —Commercial:10/12/15/20ns —Industrial:10/12/15/20ns ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputsdirectly LVTTL-compatible ◆Lowpowerconsumptionviachipdes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V016SA12PHG

3.3VCMOSStaticRAM1Meg(64Kx16-Bit)

Description TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganizedas64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

产品属性

  • 产品编号:

    IDT71V016SA12Y

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 异步

  • 存储容量:

    1Mb(64K x 16)

  • 存储器接口:

    并联

  • 写周期时间 - 字,页:

    12ns

  • 电压 - 供电:

    3V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    44-BSOJ(0.400",10.16mm 宽)

  • 供应商器件封装:

    44-SOJ

  • 描述:

    IC SRAM 1MBIT PARALLEL 44SOJ

供应商型号品牌批号封装库存备注价格
IDT
23+
SOJ44L
35680
只做进口原装QQ:373621633
询价
IDT
23+
44-SOJ
9550
专业分销产品!原装正品!价格优势!
询价
IDT
S0J44
5
全新原装进口自己库存优势
询价
IDT
02+
SOJ44
12
询价
IDT
22+
SOJ44
346
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
IDT
00+
SOJ44
207
全新原装100真实现货供应
询价
IDT
23+
SOJ44
5000
原装正品,假一罚十
询价
IDT
23+
44PINSOJ
9526
询价
IDT
22+
SOJ44
2560
绝对原装!现货热卖!
询价
IDT
2339+
SOJ
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多IDT71V016SA12Y供应商 更新时间2024-4-27 10:30:00