IRF230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE)

200Volt,0.40ΩHEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

IRF230

8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRF230

N-ChannelPowerMOSFETs,12A,150-200V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

IRF230

N-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Standard)

IRFE230

N-CHANNELPOWERMOSFET

IRFE230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

PartNumberBVDSSRDS(on)ID IRFE230200V0.40Ω5.5A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerst

IRFE230

SimpleDriveRequirements

IRFF230

N-CHANNELENHANCEMENT

IRFF230

5.5A,200V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFR230

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedand

IRFR230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

IRFR230A

iscN-ChannelMOSFETTransistor

IRFR230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

IRFS230

iscN-ChannelMOSFETTransistor

IRFU230A

iscN-ChannelMOSFETTransistor

IRFU230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

IRFU230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

IRFY230

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

IRFY230C

N-ChannelMOSFETinaHermeticallysealed