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HY628100BLG-E	文件：175.71 Kbytes Page：10 Pages	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HM628100I	文件：91.14 Kbytes Page：17 Pages	WideTemperatureRangeVersion8MSRAM(1024-kwordx8-bit)	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HY628100A	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100AG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100ALG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100ALLG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100B	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100B-E	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100B-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100BLG	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100BLG-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100BLLG	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100BLLG-E	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix
HY628100BLLG-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor SK海力士海力士半导体	Hynix

详细参数

型号：
HY628100BLG-E
制造商：
HYNIX
制造商全称：
Hynix Semiconductor
功能描述：
128K x8 bit 5.0V Low Power CMOS slow SRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	HY628100BLL1-55I	HY	2017+	SOP	32456	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市凌旭科技有限公司	HY628100BLL1-55I	HYNIX	2016+	SOP	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市百视威讯电子科技有限公司	HY628100BLL1-55I		23+	N/A	90650	正品授权货源可靠	询价
深圳赋能华科电子有限公司	HY628100BLL1-55I	HYNIX	22+	SOP	2960	诚信交易大量库存现货	询价
深圳市英卓尔科技有限公司	HY628100BLL1-55I	HYNIX	20+	SOP	2960	诚信交易大量库存现货	询价
京海半导体(深圳)有限公司	HY628100BLL1-55I	HY	21+	SOP	10000	原装现货假一罚十	询价
深圳市恒达亿科技有限公司	HY628100BLL1-55I	HY	23+	SOP	3200	全新原装、诚信经营、公司现货销售	询价
深圳市汇莱威科技有限公司	HY628100BLL1-55I		HY	SOP	68900	原包原标签100%进口原装常备现货!	询价
深圳市胜彬电子有限公司	HY628100BLL1-55I	HYNIX	22+	SOP	8000	原装正品支持实单	询价
深圳市能元时代电子有限公司	HY628100BLL1-55I		23+	SOP	39288	##公司主营品牌长期供应100%原装现货可含税提供技术	询价

更多HY628100BLG-E供应商更新时间2024-5-9 9:20:00

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