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HY57V641620ESTP-5中文资料PDF规格书
HY57V641620ESTP-5规格书详情
DESCRIPTION
The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of 1,048,576x16.
HY57V641620E(L/S)T(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized withthe rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
FEATURES
• Voltage: VDD, VDDQ 3.3V supply voltage
• All device pins are compatible with LVTTL interface
• 54 Pin TSOPII (Lead or Lead Free Package)
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM, LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 4096 Refresh cycles / 64ms
• Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
• Programmable CASLatency; 2, 3 Clocks
• Burst Read Single Write operation
产品属性
- 型号:
HY57V641620ESTP-5
- 制造商:
HYNIX
- 制造商全称:
Hynix Semiconductor
- 功能描述:
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYNIX |
2016+ |
TSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
HYNIX |
2020+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
HYNIX |
2016+ |
TSOP |
6528 |
只做进口原装现货!或订货,假一赔十! |
询价 | ||
HY |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
询价 | ||
专营HYNIX |
22+ |
专营SAMSUNG |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
SAMSUNG/三星 |
22+ |
TSSOP54 |
6000 |
进口原装 假一罚十 现货 |
询价 | ||
HYNIX |
23+ |
SOP |
5000 |
原装正品,假一罚十 |
询价 | ||
SKHYNIX |
2023+ |
TSOP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG/三星 |
23+ |
TSSOP54 |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
HYNIX |
2021+ |
TSOP54 |
6029 |
百分百原装正品 |
询价 |