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HY57V561620CT-6

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CT-7

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CT-8

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CT-H

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CT-K

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CT-P

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-6

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-7

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-8

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-H

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-K

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-P

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CTP-S

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620CT-S

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620

4Banksx4Mx16BitSynchronousDRAM

TheHY57V561620Tisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620isorganizedas4banksof4,194,304x16. TheHY57V561620Tisofferingfullysynchronousoperationreferencedtoapo

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620B

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620BLT-HI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620BLT-KI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620BLT-PI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V561620BLT-SI

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

SK海力士海力士半导体

详细参数

  • 型号:

    HY57V561620CT

  • 制造商:

    HYNIX

  • 制造商全称:

    Hynix Semiconductor

  • 功能描述:

    4 Banks x 4M x 16Bit Synchronous DRAM

供应商型号品牌批号封装库存备注价格
HYNIX
SOP
7
询价
23+
N/A
36100
正品授权货源可靠
询价
HYNIX
04+
TSSOP
11
就找我吧!--邀您体验愉快问购元件!
询价
HYNIX
TSOP
265209
假一罚十原包原标签常备现货!
询价
HYUNDAI
2022
TSOP
1950
全新原装现货
询价
HYNIX
23+
TSOP
50000
全新原装正品现货,支持订货
询价
HYNIX/海力士
21+
TSSOP
10000
原装现货假一罚十
询价
HYNIX/海力士
22+
TSSOP
9000
原装正品
询价
Hynix/SK hynix/海力士/海力士半
21+
TSOP
2502
优势代理渠道,原装正品,可全系列订货开增值税票
询价
HYNIX
22+
TSSOP
50000
只做原装正品,假一罚十,欢迎咨询
询价
更多HY57V561620CT供应商 更新时间2024-4-29 10:50:00