零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HT9214DL | 15-Memory Tone/Pulse Dialer 15-MemoryTone/PulseDialer | HoltekHolmate Technology Corp. (Holtek) 合泰 | Holtek | |
RambusXDRClockGenerator GeneralDescription TheICS9214clockgeneratorprovidesthenecessaryclocksignalstosupporttheRambusXDRTMmemorysubsystemandRedwoodlogicinterface.Theclocksourceisareferenceclockthatmayormaynotbemodulatedforspreadspectrum.TheICS9214provides4differentialclockpair | ICSTChina Resources Microelectronics Limited Limited 华润微电子华润微电子有限公司 | ICST | ||
RambusTMXDRTMClockGenerator | ICSI Integrated Circuit Solution Inc | ICSI | ||
RambusTMXDRTMClockGenerator | ICSI Integrated Circuit Solution Inc | ICSI | ||
RambusXDRClockGenerator GeneralDescription TheICS9214clockgeneratorprovidesthenecessaryclocksignalstosupporttheRambusXDRTMmemorysubsystemandRedwoodlogicinterface.Theclocksourceisareferenceclockthatmayormaynotbemodulatedforspreadspectrum.TheICS9214provides4differentialclockpair | ICSTChina Resources Microelectronics Limited Limited 华润微电子华润微电子有限公司 | ICST | ||
PowerMOSFET(Vdss=-250V,Rds(on)=3.0ohm,Id=-2.7A) | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES •Advancedprocesstechnology •Fullyavalancherated •Surface-mount(IRFR9214,SiHFR9214) •Straightlead(IRFU9214,SiHFU9214) •P-channel •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=-250V,RDS(on)=3.0廓,ID=-2.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthede | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号:
HT9214DL
- 制造商:
HOLTEK
- 制造商全称:
Holtek Semiconductor Inc
- 功能描述:
15-Memory Tone/Pulse Dialer
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HOLTEK |
22+ |
DIP |
2560 |
绝对原装!现货热卖! |
询价 | ||
HT |
24+ |
DIP |
440 |
询价 | |||
HOLTEK |
23+ |
SOP |
5000 |
原装正品,假一罚十 |
询价 | ||
HOLTEK |
2018+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
HOLTEK |
23+ |
DIP-28P |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
HOLTEK/合泰 |
24+ |
DIP-18 |
413 |
大批量供应优势库存热卖 |
询价 | ||
HOLTEK/合泰 |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Holtek/合泰 |
21+ |
DIP |
10000 |
原装现货假一罚十 |
询价 | ||
HOLTEK/合泰 |
2022 |
DIP |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
HOLTEK |
DIP |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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