| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HMC374E | SMT PHEMT LOW NOISE AMPLIFIER, 0.3 - 3.0 GHz | Hittite HITTITE | Hittite | |
HMC374E | 包装：托盘 封装/外壳：SOT-23-6 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP GP 300MHZ-3GHZ SOT26 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | |
包装：带 封装/外壳：SOT-23-6 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP GP 300MHZ-3GHZ SOT26 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
SUBMINIATUREFUSES | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
Workhorseclampwithincreasedperformanceandflexibility | FLUKEFluke Corporation 福禄克公司 | FLUKE | ||
SMTPHEMTLOWNOISEAMPLIFIER,0.3-3.0GHz | Hittite HITTITE | Hittite | ||
4.5A,500kHzStep-DownSwitchingRegulator | LINERLinear Technology 线性技术公司 | LINER | ||
RadiationHardenedOctalDFlip-Flop,Three-State Description TheIntersilACS374MSisaradiationhardenedoctalD-typeflip-flopwiththree-stateoutputs.Theeightedge-triggeredflip-flopsenterdataintotheirregistersonthelowtohightransitionofclock(CP).TheOutputEnable(OEN)controlsthethree-stateoutputsandisindependento | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalDFlip-Flop,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalDFlip-Flop,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalDFlip-Flop,Three-State Description TheIntersilACS374MSisaradiationhardenedoctalD-typeflip-flopwiththree-stateoutputs.Theeightedge-triggeredflip-flopsenterdataintotheirregistersonthelowtohightransitionofclock(CP).TheOutputEnable(OEN)controlsthethree-stateoutputsandisindependento | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalDFlip-Flop,Three-State Description TheIntersilACS374MSisaradiationhardenedoctalD-typeflip-flopwiththree-stateoutputs.Theeightedge-triggeredflip-flopsenterdataintotheirregistersonthelowtohightransitionofclock(CP).TheOutputEnable(OEN)controlsthethree-stateoutputsandisindependento | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalDFlip-Flop,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalDFlip-Flop,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalDFlip-Flop,Three-State Description TheIntersilACS374MSisaradiationhardenedoctalD-typeflip-flopwiththree-stateoutputs.Theeightedge-triggeredflip-flopsenterdataintotheirregistersonthelowtohightransitionofclock(CP).TheOutputEnable(OEN)controlsthethree-stateoutputsandisindependento | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalDFlip-Flop,Three-State Description TheIntersilACS374MSisaradiationhardenedoctalD-typeflip-flopwiththree-stateoutputs.Theeightedge-triggeredflip-flopsenterdataintotheirregistersonthelowtohightransitionofclock(CP).TheOutputEnable(OEN)controlsthethree-stateoutputsandisindependento | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalDFlip-Flop,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalDFlip-Flop,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalDFlip-Flop,Three-State Description TheIntersilACS374MSisaradiationhardenedoctalD-typeflip-flopwiththree-stateoutputs.Theeightedge-triggeredflip-flopsenterdataintotheirregistersonthelowtohightransitionofclock(CP).TheOutputEnable(OEN)controlsthethree-stateoutputsandisindependento | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
low-loss,compact,andeconomicalsurface-acoustic-wave(SAW)filter | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT |
产品属性
- 产品编号：
HMC374E
- 制造商：
Analog Devices Inc.
- 类别：
RF/IF，射频/中频和 RFID > 射频放大器
- 包装：
托盘
- 频率：
300MHz ~ 3GHz
- P1dB：
22dBm
- 增益：
9dB
- 噪声系数：
1.8dB
- 射频类型：
通用
- 电压 - 供电：
2.75V ~ 5.5V
- 电流 - 供电：
90mA
- 安装类型：
表面贴装型
- 封装/外壳：
SOT-23-6
- 供应商器件封装：
SOT-23-6
- 描述：
IC RF AMP GP 300MHZ-3GHZ SOT26
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI/HITTITE |
23+ |
SOT23 |
8369 |
全新原装真实库存含13点增值税票! |
询价 | ||
MINI |
2018+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
询价 | ||
HITTITE |
1511+ |
QM53 |
1 |
原装库存有订单来谈优势 |
询价 | ||
Hittite |
23+ |
QM53 |
16800 |
进口原装现货 |
询价 | ||
HITTITE |
23+ |
QM53 |
50000 |
全新原装现货热卖 |
询价 | ||
ADI(亚德诺) |
23+ |
SOT236 |
907 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
询价 | ||
HITTITE |
2020+ |
SOT23-6 |
650 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
AD |
1643+ |
6ldSOT |
72 |
低价支持实单,样品可拆 |
询价 | ||
HIT |
08+ |
SOT23-6 |
500 |
询价 | |||
HITTITE |
23+ |
SOT23 |
7750 |
全新原装优势 |
询价 |
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