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HMC-ABH264

ACTIVE BIAS CONTROLLER

GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr

Hittite

Hittite Microwave Corporation

HMC-ABH264

GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER

GeneralDescription ThehmC-ABh264isahighdynamicrangeGaAsphemTmmiCmediumpowerAmplifierwhichoperatesbetween34and42Ghz.ThehmC-ABh264provides18.5dBofgain,andanoutputpowerof18dBmat1dBcompressionfroma+5Vsupply.ThehmC-ABh264amplifiercaneasilybeintegratedi

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

HMC-ABH264

GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz

GeneralDescription ThehmC-ABh264isahighdynamicrangeGaAsphemTmmiCmediumpowerAmplifierwhichoperatesbetween34and42Ghz.ThehmC-ABh264provides18.5dBofgain,andanoutputpowerof18dBmat1dBcompressionfroma+5Vsupply.ThehmC-ABh264amplifiercaneasilybeintegratedi

Hittite

Hittite Microwave Corporation

HMC-ABH264

GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz

Hittite

Hittite Microwave Corporation

HMC-ABH264

Active Bias Controller High Current

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

HMC-ABH264_10

GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz

Hittite

Hittite Microwave Corporation

HV264

Quad,HighVoltage,AmplifierArray

SUTEX

Supertex, Inc

IRFP264

StandardPowerMOSFET-N-ChannelEnhancementMode

N-ChannelEnhancementMode StandardPowerMOSFET Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP264

PowerMOSFET(Vdss=250V,Rds(on)=0.075ohm,Id=38A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastS

IRF

International Rectifier

IRFP264

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSw

VishayVishay Siliconix

威世科技威世科技半导体

IRFP264

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP264

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP264

PowerMOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半导体

IRFP264N

PowerMOSFET(Vdss=250V,Rds(on)=60mohm,Id=44A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP264N

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknowfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半导体

IRFP264NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP264NPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknowfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半导体

IRFP264PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSw

VishayVishay Siliconix

威世科技威世科技半导体

IRFP264PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFP264PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    HMC-ABH264

  • 制造商:

    HITTITE

  • 制造商全称:

    Hittite Microwave Corporation

  • 功能描述:

    GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz

供应商型号品牌批号封装库存备注价格
HITTITE
17+
SMD
600
“芯达集团”专营军工百分之百原装进口
询价
AD
22+
原厂原封
500
原装优势军工物料供应
询价
ADI
24+
CHIPS
12000
一级代理现货、保证进口原装正品假一罚十价格合理
询价
HITTITE
23+
BGA
3500
正规渠道,只有原装!
询价
HITTITE
22+
BGA
1572
原装现货假一赔十
询价
HITTITE
24+
BGA QFP
13500
免费送样原盒原包现货一手渠道联系
询价
2017+
SMD
1585
只做原装正品假一赔十!
询价
HITTITE
23+
250
原装现货,欢迎咨询
询价
HITTITE
23+
进口
8000
原装正品,假一罚十
询价
HITTITE
13+
NA
100
终端备货原装现货-军工器件供应商
询价
更多HMC-ABH264供应商 更新时间2024-9-20 10:45:00