首页 >HMC-ABH264>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HMC-ABH264 | ACTIVE BIAS CONTROLLER GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr | Hittite Hittite Microwave Corporation | Hittite | |
HMC-ABH264 | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER GeneralDescription ThehmC-ABh264isahighdynamicrangeGaAsphemTmmiCmediumpowerAmplifierwhichoperatesbetween34and42Ghz.ThehmC-ABh264provides18.5dBofgain,andanoutputpowerof18dBmat1dBcompressionfroma+5Vsupply.ThehmC-ABh264amplifiercaneasilybeintegratedi | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | |
HMC-ABH264 | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz GeneralDescription ThehmC-ABh264isahighdynamicrangeGaAsphemTmmiCmediumpowerAmplifierwhichoperatesbetween34and42Ghz.ThehmC-ABh264provides18.5dBofgain,andanoutputpowerof18dBmat1dBcompressionfroma+5Vsupply.ThehmC-ABh264amplifiercaneasilybeintegratedi | Hittite Hittite Microwave Corporation | Hittite | |
HMC-ABH264 | GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz | Hittite Hittite Microwave Corporation | Hittite | |
HMC-ABH264 | Active Bias Controller High Current | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz | Hittite Hittite Microwave Corporation | Hittite | ||
Quad,HighVoltage,AmplifierArray | SUTEX Supertex, Inc | SUTEX | ||
StandardPowerMOSFET-N-ChannelEnhancementMode N-ChannelEnhancementMode StandardPowerMOSFET Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-mode po | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET(Vdss=250V,Rds(on)=0.075ohm,Id=38A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastS | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSw | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=250V,Rds(on)=60mohm,Id=44A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknowfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknowfor,providesthedesignerwit | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSw | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号:
HMC-ABH264
- 制造商:
HITTITE
- 制造商全称:
Hittite Microwave Corporation
- 功能描述:
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITTITE |
17+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
AD |
22+ |
原厂原封 |
500 |
原装优势军工物料供应 |
询价 | ||
ADI |
24+ |
CHIPS |
12000 |
一级代理现货、保证进口原装正品假一罚十价格合理 |
询价 | ||
HITTITE |
23+ |
BGA |
3500 |
正规渠道,只有原装! |
询价 | ||
HITTITE |
22+ |
BGA |
1572 |
原装现货假一赔十 |
询价 | ||
HITTITE |
24+ |
BGA QFP |
13500 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
询价 | |||
HITTITE |
23+ |
250 |
原装现货,欢迎咨询 |
询价 | |||
HITTITE |
23+ |
进口 |
8000 |
原装正品,假一罚十 |
询价 | ||
HITTITE |
13+ |
NA |
100 |
终端备货原装现货-军工器件供应商 |
询价 |
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