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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FDD5N50	文件：298.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDD5N50F	文件：297.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.55Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDD5N50F	文件：641.93 Kbytes Page：8 Pages	N-ChannelMOSFET,FRFET500V,3.5A,1.55廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50F	文件：758.53 Kbytes Page：8 Pages	N-ChannelMOSFET,FRFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50FTM	文件：758.53 Kbytes Page：8 Pages	N-ChannelMOSFET,FRFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50NZ	文件：519.9 Kbytes Page：8 Pages	N-ChannelMOSFET500V,4A,1.5? Description UniFET™IIMOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50NZF	文件：304.59 Kbytes Page：8 Pages	N-ChannelMOSFET500V,3.7A,1.75廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50NZFTM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50NZFTM	文件：304.59 Kbytes Page：8 Pages	N-ChannelMOSFET500V,3.7A,1.75廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50NZTM	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50NZTM	文件：519.9 Kbytes Page：8 Pages	N-ChannelMOSFET500V,4A,1.5? Description UniFET™IIMOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50U	文件：641.19 Kbytes Page：8 Pages	N-ChannelMOSFET,FRFET500V,3A,2.0廓 Description UniFETTMMOSFETisFairchildSemiconductor®shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength. Features •RDS(on)=1	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD5N50U	文件：298.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDP5N50	文件：265.92 Kbytes Page：10 Pages	N-ChannelMOSFET500V,5A,1.4廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP5N50	文件：270.93 Kbytes Page：10 Pages	N-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP5N50F	文件：807.91 Kbytes Page：10 Pages	N-ChannelMOSFET,FRFET500V,4.5A,1.55廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP5N50NZ	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP5N50NZ	文件：332.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDP5N50NZF	文件：272.03 Kbytes Page：9 Pages	N-ChannelMOSFET500V,4.2A,1.75廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDP5N50NZU	文件：315.42 Kbytes Page：9 Pages	N-ChannelMOSFET500V,3.9A,2.0廓	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
HFD5N50S
制造商：
SEMIHOW
制造商全称：
SEMIHOW
功能描述：
500V N-Channel MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	HFD5N50S		23+	N/A	45990	正品授权货源可靠	询价
深圳兆威电子有限公司	HFD5N50S	VB	2019	TO-252	55000	绝对原装正品假一罚十!	询价
深圳市新力诚科技有限公司	HFD5N50S	Semihow	2020+	TO-252	45930	公司代理品牌,原装现货超低价清仓!	询价
深圳市国宇半导体科技有限公司	HFD5N50S	S	23+	TO-252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	HFD5N50S	SEMIHOW	2022+	TO-252	50000	原厂代理终端免费提供样品	询价
深圳市吉利鑫科技发展有限公司	HFD5N50S	SEMIHOW	2022+	TO-252	79999		询价
易创佳业科技（深圳）有限公司	HFD5N50S	S	23+	TO-252	6000	原装正品，支持实单	询价
深圳市威雅利发展有限公司	HFD5N50S	SEMIHOW	12+	TO-252	277	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市维尔达电子有限公司	HFD5N50S	st	2023+	TO-252	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市汇莱威科技有限公司	HFD5N50S	SEMIHOW			589220	16余年资质绝对原盒原盘更多数量	询价

更多HFD5N50S供应商更新时间2024-5-21 11:36:00

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