| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HEM373C | Broadband Amplifier | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成电路河北博威集成电路有限公司 | BOWEI | |
CeleronMProcessoron90nmProcess | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | Intel | ||
SUBMINIATUREFUSES | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
HighPerformanceBoxSealingTape | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
Workhorseclampwithincreasedperformanceandflexibility | FLUKEFluke Corporation 福禄克公司 | FLUKE | ||
Mini-ClampSocket •Designedtoaccommodatetypicalwiringspecificationsper JapaneseandAsiansuppliers •LatchesavailableforPanelMountapplications •Nospecialwirepreparation •Integratedcableretention •Designacceptsmultiplewiresizediameters •Easy,quick,andreliableIDCterminationusing | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M | ||
OCTALD-TYPETRANSPARENTLATCHESWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •1.25MicronRadiationHardenedSOSCMOS •TotalDose300KRAD(Si) •SingleEventUpset(SEU)Immunity 80MEV-cm2/mg •DoseRateUpset>1011RAD(Si)/s,20nsPulse •Latch-UpFreeUnderAnyConditions •MilitaryTemperatureRa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighimp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilACTS373MSisaradiationhardenedoctaltransparentlatchwiththree-stateoutputs.Theoutputsaretransparenttotheinputswhenthelatchenable(LE)ishigh.WhentheLEgoeslow,thedataislatched.WhentheOutputEnable(OE)ishigh,theoutputsareinthehighim | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
HEM373C
- 制造商：
BOWEI
- 制造商全称：
BOWEI
- 功能描述：
Broadband Amplifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BOWEI |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
CHINA13 |
1146+ |
微波集成电路 |
9 |
原装现货 实单可谈 |
询价 | ||
国产 |
21+ |
NA |
645 |
航宇科工半导体-央企合格优秀供方! |
询价 | ||
国产 |
QQ咨询 |
189-8877-7135 |
63 |
全新原装 研究所指定供货商 |
询价 | ||
BOWEI |
2018+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
询价 | ||
CHINA13 |
0615+ |
微波集成电路 |
1 |
现货库存 |
询价 |
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