| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET VDSS=30VR DS(on)=0.007Ω ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET VDSS=30VR DS(on)=0.007Ω ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PNP(SWITCHINGAPPLICATION) SWITCHINGAPPLICATION(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit •BuiltinbiasResistor(R1=22KΩ,R2=22KΩ) •ComplementtoKSR1203 | SamsungSamsung Group 三星三星半导体 | Samsung | ||
CITSWITCH | CITCIT CIT | CIT | ||
200mA,DualChannelUltra-FastCMOSLDORegulator | POWERLowpower Semiconductor inc 微源半导体微源半导体股份有限公司 | POWER |
替换型号
- 09-308021
- 103705
- 104846
- 10658281
- 10795-6
- 131306
- 134198-001
- 1348A46H01
- 14500001-001
- 146641
- 1471-4364
- 15405-1
- 17-12058-1
- 1820-0861
- 1895991-1
- 198409-11
- 19A115913-19
- 202914-020
- 2068510-0702
- 221-Z9084
- 236-0003
- 2500390-446
- 2501557-446
- 2656212
- 2656212-1
- 2656748
- 2898431-2
- 2899000-00
- 3007476-00
- 3007476-01
- 317-2627-1
- 326846
- 349-113-014
- 3L4-9013-01
- 40-065-19-013
- 401113-1
- 423-800178
- 43A168135-4
- 477-0381-001
- 48-1050-SL12324
- 5-113641
- 51310004
- 51577900
- 52000-046
- 551-010-00
- 55976-1
- 56519
- 569-0320-820
- 569-0320-822
- 569-0544-322
- 569-0880-446
- 586-153
- 65600700
- 671A293H01
- 68A7349-D46
- 68A7349PD46
- 6900K91-003
- 733W00028
- 7528048-P4
- 77C800-008
- 811791
- 89028-4
- 89028-4-1-4
- 9003149
- 9003149-02
- 928514-1
- 928514-101
- 946DC
- 946PC
- C1046P
- C1046P(HEP)
- CD2302E
- CD2302E/846
- DM946N
- DN1946
- DTML9946
- EA33X8399
- ECC-01264
- ECG9946
- HD2203
- HD2203P
- HEPC1046P
- HEPC1056P
- HL33429
- IC32(ELCOM)
- ITT946-5
- ITT946N
- LB-2000
- LB2000
- M5946
- M5946P
- MC846L
- MC846P
- MIC946-5D
- MIC946-5P
- NTE9946
- PD9946-59
- PE9946-59
- R10254P946
- R10255P946B
- SL11879
- SL16204
- SL16519
- SL16589
- SL53429
- SN15846J
- SN15846N
- SW946-2M
- SW946-2P
- TCG9946
- TD1065
- TD1065P
- WEP9946
- WEP9946/9946
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
05+ |
原厂原装 |
5298 |
只做全新原装真实现货供应 |
询价 | ||
HIT |
22+ |
DIP |
5000 |
进口原装!现货库存 |
询价 | ||
HIT |
22+ |
DIP |
3629 |
原装优势!房间现货!欢迎来电! |
询价 | ||
HIT |
9946 |
DIP |
334 |
特价销售欢迎来电!! |
询价 | ||
HIT |
23+ |
65480 |
询价 | ||||
HITACHI |
2022+ |
CDIP |
2820 |
只售进口原装公司现货! |
询价 | ||
HITACHI/日立 |
22+ |
240 |
原装现货假一赔十 |
询价 | |||
HITACHI/日立 |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
HITACHI/日立 |
23+ |
19 |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
HITACHI/日立 |
23+ |
19 |
6500 |
专注配单,只做原装进口现货 |
询价 |
