零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HAF | HONEYWELL ZEPHYR DIGITAL AIRFLOW SENSORS: HAF SERIES-HIGH ACCURACY | HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际 | Honeywell | |
Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitopertiontoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon P Channel MOS FET Series Power Switching ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号:
HAF
- 制造商:
HONEYWELL
- 制造商全称:
Honeywell Solid State Electronics Center
- 功能描述:
HONEYWELL ZEPHYR DIGITAL AIRFLOW SENSORS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS |
05+ |
原厂原装 |
5016 |
只做全新原装真实现货供应 |
询价 | ||
INIERSIL. |
22+ |
SMD |
3200 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
N/A |
22+ |
QFP |
3000 |
强调现货,随时查询! |
询价 | ||
RENESAS |
16+ |
TO252 |
1068 |
原装现货假一罚十 |
询价 | ||
HIT |
23+ |
TO263 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
Honeywell |
17+ |
原厂原装 |
6000 |
进口原装正品假一赔十,货期7-10天 |
询价 | ||
HITACHI |
22+ |
TO252 |
6980 |
原装现货,可开13%税票 |
询价 | ||
RENESAS |
7 |
2600 |
全新原装进口自己库存优势 |
询价 | |||
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | |||
RENESAS |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 |
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