零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
H07N65 | N-Channel Power Field Effect Transistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde | HSMC 华昕 | HSMC | |
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MOSFET650V,7AN-CHANNEL FEATURE •RoHSCompliant •RDS(ON),typ.=1.2Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6A,RDS(ON)=1.45W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,5.9A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
详细参数
- 型号:
H07N65
- 制造商:
HSMC
- 制造商全称:
HSMC
- 功能描述:
N-Channel Power Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
85100 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
H |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
H |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
H |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
H |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
H |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
HSMC |
21+ROHS |
28957 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
2017+ |
8 |
48520 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 |
相关规格书
更多- H07NND3H2U3G100
- H07NRD3H2U3G100
- H07NTD3H2U3G100
- H07NVD3H2U3G100
- H08A10PT
- H08A15
- H08A15PT
- H08A20
- H08A20PT
- H08A30
- H08A40
- H08A50
- H08A60
- H08C
- H-09-010-BK
- H0911
- H099E31
- H0D088-344TGSC-Y
- H0F1225L12HHBB
- H0PPH-1006G
- H0PPH-1018G
- H0PPH-1036G
- H0PPH-1406G
- H0PPH-1418G
- H-1
- H1 BP130W
- H1 BP70W/24V
- H1,5/14
- H1.5/14D BLACK BD
- H1.5X2LG6
- H-10
- H100
- H100 1/2
- H100 KP9 WAF
- H10004304
- H100056
- H100058
- H-1000A
- H1000D1B50WL
- H-1000L
- H100136F
- H1001S1NL
- H-1002
- H100-24S12
- H100-24S2.5
相关库存
更多- H07NND3HU3G100
- H07NRD3HU3G100
- H07NTD3HU3G100
- H07NVD3HU3G100
- H08A15
- H08A15PT
- H08A20
- H08A20PT
- H08A30
- H08A30PT
- H08A40PT
- H08A50PT
- H08A60PT
- H08N02CTS
- H090E31
- H09480062CPCD8
- H0A327200064
- H0D720400003
- H0H400400007
- H0PPH-1006M
- H0PPH-1018M
- H0PPH-1036M
- H0PPH-1406M
- H0PPH-1418M
- H1-
- H1 BP55W
- H1,0/14
- H1.0/14D RED BD
- H1.5X2BL6
- H10
- H10/14
- H-100
- H100 3/8
- H-1000
- H100054
- H100057
- H10007-08
- H1000C1
- H-1000-F2-380
- H1001
- H1001M1
- H-1002
- H100-24S12
- H100-24S15
- H100-24S3.3