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IDTCV123PVG

PROGRAMMABLEFLEXPC™CLOCKFORP4PROCESSOR

FEATURES: •OnehighprecisionPLLforCPU,withSSCandNprogrammable •OnehighprecisionPLLforSRC/PCI/SATA,SSCandNprogrammable •OnehighprecisionPLLfor96MHz/48MHz •Band-gapcircuitfordifferentialoutputs •Supportsspreadspectrummodulation,downspread0.5 •SupportsSMB

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IP123

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IP123A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IPM-C123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯美国JDSU

IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪讯美国JDSU

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF123

N-CHANNELPOWERMOSFETS

FEATURES •LowRDs

SamsungSamsung Group

三星三星半导体

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Forautomaticinsertion •Endstackable •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技

IRFD123

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •ForAutomaticInsertion

VishayVishay Siliconix

威世科技

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

HARRIS corporation

IRFD123PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •ForAutomaticInsertion

VishayVishay Siliconix

威世科技

IRFD123PBF

PowerMOSFET

VishayVishay Siliconix

威世科技

IRFF123

N-ChannelEnhancement-ModePowerMOSField-EffectTransistors

5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice

GESSGE Solid State

GE Solid State

ISCNH123L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

产品属性

  • 产品编号:

    GVA-123+

  • 制造商:

    Mini-Circuits

  • 类别:

    RF/IF,射频/中频和 RFID > 射频放大器

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 频率:

    10MHz ~ 12GHz

  • P1dB:

    16.3dBm

  • 增益:

    7.1dB

  • 噪声系数:

    6.9dB

  • 射频类型:

    LTE,MMDS,无线局域网

  • 电压 - 供电:

    4.8V ~ 5.2V

  • 电流 - 供电:

    52mA

  • 测试频率:

    850MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-243AA

  • 供应商器件封装:

    SOT-89

  • 描述:

    IC RF AMP LTE 10MHZ-12GHZ SOT89

供应商型号品牌批号封装库存备注价格
Mini-circuits
18+
原厂原装
6000
专注Mini射频微波全系列,只做原装正品,现货库存
询价
MINI-CIRCUITS
23+
DF782
28650
主营品牌深圳百分百原装现货假一罚十绝对价优
询价
Mini-Circuits
21+
1250
专做MINI,原装现货,欢迎来电
询价
MINI
19+
SOT-89
1636
进口原装公司现货热卖
询价
Mini-Circuits
23+
N/A
50000
全新原装现货热卖
询价
Mini-Circuits
24+
1000
优势货源原装正品
询价
Mini-Circuits
2023+
-
4550
全新原装正品
询价
MINI
2018+
SOT-89-3
6528
科恒伟业!承若只做进口原装正品假一赔十!1581728776
询价
MINI
18+
SMD
1788
进口原装正品优势供应QQ3171516190
询价
MINI
2017+
SMD
18700
询价
更多GVA-123+供应商 更新时间2020-6-4 9:34:00