Description

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a

thermally-enhanced surface-mount package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance: 10 µs pulse

width, 10 duty cycle, 2690 MHz, 48 V

- Output power at P3dB = 270 W

- Efficiency = 66

- Gain = 18.1 dB

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @48 V, 60 W

(WCDMA) output power

• Pb-free and RoHS compliant

GTVA262701FA-V2-R0属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。WOLFSPEED, INC.制造生产的GTVA262701FA-V2-R0晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。