首页 >GT15>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

GT15A-2024SCF

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

GT15B-3S

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

GT15B-3S-F

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

GT15B-CP

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

GT15B-SC-K

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

GT15B-SU

HID Lamp DII Sockets

Features EngageswithP32dtypelampbaseconformingtotheIEC61-1standard. Crimpingisusedasthewiringmethodwiththecabletomakeassemblyveryeasy. Abulbcheckfunctionisavailablewithsometypes(e.g.,GT15AandB). GT15Bpermitsshieldedmounting.

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

GT15G101

N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J101

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J102

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J103

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC(

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J121

Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT

HighPowerSwitchingApplications FastSwitchingApplications ●The4thgeneration ●Enhancement-mode ●UltraFastSwitching(UFS:Operatingfrequencyupto150kHz(Reference) ●Highspeed:tr=0.03μs(typ.):tf=0.08μs(typ.) ●Lowswitchingloss:Eon=0.23mJ(typ.):Eoff=0.18mJ(typ.

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J301

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS Third-generationIGBT Enhancementmodetype Highspeed:tf=0.30μs(Max.)(IC=15A) Lowsaturationvoltage:VCE(sat)=2.7V(Max.)(IC=15A) FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J301

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J311

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS ●Third-generationIGBT ●Enhancementmodetype ●Highspeed:tf=0.30μs(Max.)(IC=15A) ●Lowsaturationvoltage:VCE(sat)=2.7V(Max.)(IC=15A) ●FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J311

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J321

High Power Switching Applications Fast Switching Applications

HighPowerSwitchingApplications FastSwitchingApplications •Fourth-generationIGBT •Fastswitching(FS •Enhancementmodetype •Highspeed:tf=0.03μs(typ.) •LowsaturationVoltage:VCE(sat)=1.90V(typ.) •FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J321

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J331

High Power Switching Applications Motor Control Applications

HighPowerSwitchingApplications MotorControlApplications •Fourth-generationIGBT •Enhancementmodetype •Highspeed:tf=0.10μs(typ.) •Lowsaturationvoltage:VCE(sat)=1.75V(typ.) •FRDincludedbetweenemitterandcollector

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15J331

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

GT15M321

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

HIGHPOWERSWITCHINGAPPLICATIONS •Fourth-generationIGBT •FRDincludedbetweenemitterandcollector •Enhancementmodetype •Highspeed:tf=0.20μs(TYP.)(IC=15A) •Lowsaturationvoltage:VCE(sat)=1.8V(TYP.) (IC=15A

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

产品属性

  • 产品编号:

    GT15B-3S

  • 制造商:

    Hirose Electric Co Ltd

  • 类别:

    连接器,互连器件 > 同轴连接器(RF)配件

  • 包装:

    散装

  • 描述:

    CONN BODY

供应商型号品牌批号封装库存备注价格
HRS-广濑
24+25+/26+27+
车规-连接器
9358
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
SILVERM
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
SILVERM
16+
MODULES
2100
公司大量全新现货 随时可以发货
询价
SILVERM
23+
MODULES
7300
专注配单,只做原装进口现货
询价
SILVERM
23+
MODULES
7300
专注配单,只做原装进口现货
询价
SILVERMICRO
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
询价
TOSHIBA
22+
TO-220F
5500
绝对全新原装现货
询价
银茂微
23+
MODULE
4500
专营国产功率器件
询价
TOSHIBA
05+
TO-247
10000
全新原装 绝对有货
询价
23+
150
专业模块销售,欢迎咨询
询价
更多GT15供应商 更新时间2024-5-2 16:18:00