首页 >GT-USB-7001B>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
DirectPLLFrequencySynthesizersforElectronicTuning Features •TheLM7001JandLM7001JMarePLLfrequencysynthesizerLSIsfortuners,makingitpossibletomakeuphigh-performanceAM/FMtunerseasily. •TheseLSIsaresoftwarecompatiblewiththeLM7000,butdonotincludeanIFcalculationcircuit. •TheFMVCOcircuitincludesahigh-speedp | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
DirectPLLFrequencySynthesizersforElectronicTuning Features •TheLM7001JandLM7001JMarePLLfrequencysynthesizerLSIsfortuners,makingitpossibletomakeuphigh-performanceAM/FMtunerseasily. •TheseLSIsaresoftwarecompatiblewiththeLM7000,butdonotincludeanIFcalculationcircuit. •TheFMVCOcircuitincludesahigh-speedp | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
DirectPLLFrequencySynthesizersforElectronicTuning Features •TheLM7001JandLM7001JMarePLLfrequencysynthesizerLSIsfortuners,makingitpossibletomakeuphigh-performanceAM/FMtunerseasily. •TheseLSIsaresoftwarecompatiblewiththeLM7000,butdonotincludeanIFcalculationcircuit. •TheFMVCOcircuitincludesahigh-speedp | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
SAWFilterElectricalCharacteristic | SIPATSIPAT Co,Ltd 胜普电子重庆胜普电子有限公司 | SIPAT | ||
Fast150VHighSideNMOSStaticSwitchDriver | LINERLinear Technology 线性技术公司 | LINER | ||
Fast150VProtectedHighSideNMOSStaticSwitchDriver DESCRIPTION TheLTC®7000/LTC7000-1isafasthighsideN-channelMOSFETgatedriverthatoperatesfrominputvoltagesupto135V.ItcontainsaninternalchargepumpthatfullyenhancesanexternalN-channelMOSFETswitch,allowingittoremainonindefinitely. FEATURES ■WideOperatingVIN:3. | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Fast150VProtectedHighSideNMOSStaticSwitchDriver | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Fast150VHighSideNMOSStaticSwitchDriver | LINERLinear Technology 线性技术公司 | LINER | ||
TRANSIENTIMMUNEUNDERVOLTAGESENSINGCIRCUIT DESCRIPTION TheLX7001isanimprovedundervoltagesensingcircuitspecificallydesignedforuseasaresetcontrollerinmicroprocessor-basedsystems.Todayscomplexminiaturizedsystemspresentdifficultchallangestothesystemdesignersuchasovercomingspuriousnoiseproblems. KEYFEATURES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TRANSIENTIMMUNEUNDERVOLTAGESENSINGCIRCUIT DESCRIPTION TheLX7001isanimprovedundervoltagesensingcircuitspecificallydesignedforuseasaresetcontrollerinmicroprocessor-basedsystems.Todayscomplexminiaturizedsystemspresentdifficultchallangestothesystemdesignersuchasovercomingspuriousnoiseproblems. KEYFEATURES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TRANSIENTIMMUNEUNDERVOLTAGESENSINGCIRCUIT DESCRIPTION TheLX7001isanimprovedundervoltagesensingcircuitspecificallydesignedforuseasaresetcontrollerinmicroprocessor-basedsystems.Todayscomplexminiaturizedsystemspresentdifficultchallangestothesystemdesignersuchasovercomingspuriousnoiseproblems. KEYFEATURES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TRANSIENTIMMUNEUNDERVOLTAGESENSINGCIRCUIT DESCRIPTION TheLX7001isanimprovedundervoltagesensingcircuitspecificallydesignedforuseasaresetcontrollerinmicroprocessor-basedsystems.Todayscomplexminiaturizedsystemspresentdifficultchallangestothesystemdesignersuchasovercomingspuriousnoiseproblems. KEYFEATURES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TRANSIENTIMMUNEUNDERVOLTAGESENSINGCIRCUIT DESCRIPTION TheLX7001isanimprovedundervoltagesensingcircuitspecificallydesignedforuseasaresetcontrollerinmicroprocessor-basedsystems.Todayscomplexminiaturizedsystemspresentdifficultchallangestothesystemdesignersuchasovercomingspuriousnoiseproblems. KEYFEATURES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
TRANSIENTIMMUNEUNDERVOLTAGESENSINGCIRCUIT DESCRIPTION TheLX7001isanimprovedundervoltagesensingcircuitspecificallydesignedforuseasaresetcontrollerinmicroprocessor-basedsystems.Todayscomplexminiaturizedsystemspresentdifficultchallangestothesystemdesignersuchasovercomingspuriousnoiseproblems. KEYFEATURES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RemoteI/Omodules | moxa 台湾摩莎 | moxa | ||
RadiationHard512x9BitFIFO TheMA7001512x9FIFOismanufacturedusingDynexSemiconductorsCMOS-SOShighperformance,radiationhard,3µmtechnology. TheDynexSemiconductorSilicon-on-SapphireprocessprovidessignificantadvantagesoverbulksiliconsubstratetechnologiesInadditiontoverygoodtotaldosehardnessa | Dynex Dynex | Dynex | ||
MicroPower,Ultra-sensitiveHallEffectSwitch GENERALDESCRIPTION MA7001isathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe outp | MPOWERMajor-Power Technology Co., LTD. 久昌科技久昌科技股份有限公司 | MPOWER | ||
MicroPower,Ultra-sensitiveHallEffectSwitch GENERALDESCRIPTION MA7001isathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe outp | MPOWERMajor-Power Technology Co., LTD. 久昌科技久昌科技股份有限公司 | MPOWER | ||
MicroPower,Ultra-sensitiveHallEffectSwitch GENERALDESCRIPTION MA7001Eisathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe out | MPOWERMajor-Power Technology Co., LTD. 久昌科技久昌科技股份有限公司 | MPOWER | ||
MicroPower,Ultra-sensitiveHallEffectSwitch GENERALDESCRIPTION MA7001Eisathree-terminalHallEffectsensordevicewithanoutputdriver,mainly designedforbattery–operation,hand-heldequipment(suchasCellularandCordlessPhone, PDA). TheoutputisswitchwitheithernorthorSouthPoleofsufficientstrengthwillturnthe out | MPOWERMajor-Power Technology Co., LTD. 久昌科技久昌科技股份有限公司 | MPOWER |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
G-Switch(品赞) |
22+ |
连接器 |
123000 |
主打连接器供应,现货库存 |
询价 | ||
G-Switch(品赞) |
2308+ |
250152 |
一级代理,原装正品,公司现货! |
询价 | |||
G-SWITCH |
22+ |
N/A |
2500 |
进口原装,优势现货 |
询价 | ||
G-SWITCH |
23+ |
NA |
10 |
现货!就到京北通宇商城 |
询价 | ||
G-Switch/品赞 |
2024 |
2500 |
全新、原装 |
询价 |
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