GS61008P

Bottom-side cooled 100 V E-mode GaN transistor

Features •100Venhancementmodepowertransistor •Bottom-sidecooledconfiguration •RDS(on)=7mΩ •IDS(max)=90A •Ultra-lowFOMdie •LowinductanceGaNPX®package •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive(-20V/+10V) •Veryhighswitching

61008M

cylinderpointdistributors

GS61008T

Top-sidecooled100VE-modeGaNtransistor

Features •100Venhancementmodepowertransistor •Top-sidecooledconfiguration •RDS(on)=7mΩ •IDS(max)=90A •Ultra-lowFOMdie •LowinductanceGaNPX®package •Simplegatedriverequirements(0Vto6V) •Transienttolerantgatedrive(-20V/+10V) •Veryhighswitchingfre

MP61008

GaAsPINDIODES

PE-61008

GENERALPURPOSETRANSFORMERS2WattPulse,ElectrostaticallyShielded,500mWPulse,RFPulse,andControlTransformers

PE-61008

2WattPulse,ElectrostaticallyShielded

SI-61008-F

SI-61008-F

T-61008

LowProfileInternationalSeriesPowerTransformer