零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
GLC014 | N Channel Power MOSFET FOR LOGIC DRIVE | GSGGunter Seniconductor GmbH. Gunter Seniconductor GmbH. | GSG | |
Fieldreplaceablebearingsandelectronics | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
AluminumorLexancupsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
EFD20HIGHFREQUENCYPoETRANSFORMER | ALLIED Allied Components International | ALLIED | ||
Implement3.3VdualusingAIC1730 | AIC AIC | AIC | ||
PolySwitchResettableDevices | MACOM Tyco Electronics | MACOM | ||
LowOn-Resistance | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLogic-LevelGateDrive Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号:
GLC014
- 制造商:
GSG
- 制造商全称:
GSG
- 功能描述:
N Channel Power MOSFET FOR LOGIC DRIVE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SPRAGUE-GOODMAN |
21+ |
SMD1210 |
62280 |
询价 | |||
SLPower(Ault/Condor) |
新 |
6 |
全新原装 货期两周 |
询价 | |||
SL Power ( Ault / Condor ) |
2022+ |
2 |
全新原装 货期两周 |
询价 | |||
SPRAGUE-GOODMAN |
21+ROHS |
SMD1210 |
62280 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
OSC |
SMD |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
OSC |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
OSC |
23+ |
SMD |
20000 |
原装正品 欢迎咨询 |
询价 | ||
OSC |
23+ |
NA/ |
4000 |
原装现货,当天可交货,原型号开票 |
询价 | ||
PULSE-普思 |
24+25+/26+27+ |
RJ45.连接器 |
12680 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Block |
18+ |
NA |
1146 |
进口原装正品优势供应QQ3171516190 |
询价 |
相关规格书
更多- GLC-01809
- GLC-01844
- GLC-02377
- GLC-02389
- GLC024
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相关库存
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