零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23 Feature •BVCEO>40V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforalowequivalentOn-Resistance •500mWPowerDissipation •hFEcharacterisedupto2Aforhighcurrentgainholdup •TotallyLead-Free&FullyRoHScompliant(Notes1& | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
40VNPNSILICONPLANARMEDIUMPOWERTRANSISTORINSOT23 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNTransistor Features ●Lowequivalenton-resistance | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | PJSEMI | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(SAT)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissip | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free& | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(SAT)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissip | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(SAT)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissip | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free& | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free& | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT23 Feature •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •RCE(sat)=195mΩforaLowEquivalentOn-Resistance •500mWPowerDissipation •hFECharacterizedupto2AforHighCurrentGainHoldup •ComplementaryPNPType:FMMT591 •TotallyLead-Free& | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
FlashersandTowerLightingControls Description TheFS491isalowleakageACflasherdesignedtocontrolLED, orresistiveloads.Thisproductoffersasolid-stateoutputand maybeorderedwithaninputvoltageof24Vto240VAC,intwo ranges.Itoffersafactoryfixedflashrateof75FPMormaybe orderedwithafixed,cust | LittelfuseLittelfuse Inc. 力特富斯(Littelfuse)力特公司 | Littelfuse | ||
NPNTransistors ■Features ●CollectorCurrentCapabilityIC=1A ●CollectorEmitterVoltageVCEO=60V ●ComplementarytoFZT591 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SOT223NPNSILICONPLANARMEDIUMPOWERTRANSISTOR Features •BVCEO>60V •IC=1AhighContinuousCurrent •LowsaturationvoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES |
详细参数
- 型号:
GD491SD
- 制造商:
GTM
- 制造商全称:
GTM
- 功能描述:
SURFACE MOUNT SCHOTTKY BARRIER DIODE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
GTM |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
UDE-涌德电子 |
24+25+/26+27+ |
RJ45.连接器 |
12680 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
GD/兆易创新 |
24+ |
DO35 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
UDE CORP. |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
AMI |
22+ |
DIP |
5000 |
进口原装!现货库存 |
询价 | ||
YTY UNiCORE/苏州一天圆 |
23+ |
NA |
94 |
现货!就到京北通宇商城 |
询价 | ||
YTY UNiCORE/苏州一天圆 |
23+ |
NA |
94 |
现货!就到京北通宇商城 |
询价 |
相关规格书
更多- GD-5
- GD-50
- GD500L
- GD500W
- GD50TN33-GTT050RDH03
- GD511DK5-19
- GD5-218
- GD52R070AR
- GD52R070NB
- GD52R070NT
- GD52R075AR
- GD52R075NB
- GD52R075NT
- GD52R090AR
- GD52R090NB
- GD52R090NT
- GD52R10BAR
- GD52R10BNB
- GD52R10BNT
- GD52R120AR
- GD52R120NB
- GD52R120NT
- GD52R12BAR
- GD52R12BNB
- GD52R12BNT
- GD52R130AR
- GD52R130NB
- GD52R130NT
- GD52R145AR
- GD52R145NB
- GD52R145NT
- GD52R14BAR
- GD52R14BNB
- GD52R14BNT
- GD52R150AR
- GD52R150NB
- GD52R150NT
- GD52R16BAR
- GD52R16BNB
- GD52R16BNT
- GD52R180AR
- GD52R180NB
- GD52R180NT
- GD52R20BAR
- GD52R20BNB
相关库存
更多- GD50
- GD500F
- GD500SD
- GD501SD
- GD511
- GD5-12/OVP
- GD52R070AB
- GD52R070AT
- GD52R070NR
- GD52R075AB
- GD52R075AT
- GD52R075NR
- GD52R090AB
- GD52R090AT
- GD52R090NR
- GD52R10BAB
- GD52R10BAT
- GD52R10BNR
- GD52R120AB
- GD52R120AT
- GD52R120NR
- GD52R12BAB
- GD52R12BAT
- GD52R12BNR
- GD52R130AB
- GD52R130AT
- GD52R130NR
- GD52R145AB
- GD52R145AT
- GD52R145NR
- GD52R14BAB
- GD52R14BAT
- GD52R14BNR
- GD52R150AB
- GD52R150AT
- GD52R150NR
- GD52R16BAB
- GD52R16BAT
- GD52R16BNR
- GD52R180AB
- GD52R180AT
- GD52R180NR
- GD52R20BAB
- GD52R20BAT
- GD52R20BNR