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HA373

OCTALTRANSPARENTD-TYPELATCHESWITH3-STATEOUTPUTS

TITexas Instruments

德州仪器美国德州仪器公司

HC373

OCTALTRANSPARENTD-TYPELATCHESWITH3-STATEOUTPUTS

TITexas Instruments

德州仪器美国德州仪器公司

HC373A

Octal3-StateNon-InvertingTransparentLatch

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HC373M

OCTALTRANSPARENTD-TYPELATCHESWITH3-STATEOUTPUTS

TITexas Instruments

德州仪器美国德州仪器公司

HCS373D

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS373DMSR

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS373DTR

RadiationHardenedOctalTransparentLatch,Three-State

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS373HMSR

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS373K

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS373KMSR

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS373KTR

RadiationHardenedOctalTransparentLatch,Three-State

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS373MS

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheHCS373MSutilizesadvancedCMOS/SOStechnology.T Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS373MS

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS373T

RadiationHardenedOctalTransparentLatch,Three-State

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCT373

Octal3-StateNoninvertingTransparentLatch(High-PerformanceSilicon-GateCMOS)

Octal3-StateNoninvertingTransparentLatchHigh-PerformanceSilicon-GateCMOS TheSL74HCT373maybeusedasalevelconverterforinterfacingTTLorNMOSoutputstoHigh-SpeedCMOSinputs. TheSL74HCT373isidenticalinpinouttotheLS/ALS373. TheeightlatchesoftheSL74HCT373aretranspar

SLSSystem Logic Semiconductor

System Logic Semiconductor

HCT-373

HighCurrentToroidalInductors

API

API Delevan Inc.

HCT373M

OCTALTRANSPARENTD-TYPELATCHES

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

HCTR-373

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTS373D

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373D

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

晶体管资料

  • 型号:

    GC373

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_TR_输出极 (E)

  • 封装形式:

    直插封装

  • 极限工作电压:

  • 最大电流允许值:

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BC368,

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    A-23

  • vtest:

    0

  • htest:

    999900

  • atest:

    0

  • wtest:

    0

供应商型号品牌批号封装库存备注价格
DIODES-美台
24+25+/26+27+
车规-晶振器件
9417
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
23+
N/A
58800
一级代理放心采购
询价
COMUS
DIP
265209
假一罚十原包原标签常备现货!
询价
COMUS
23+
DIP
50000
全新原装正品现货,支持订货
询价
COMUS
2022
DIP
80000
原装现货,OEM渠道,欢迎咨询
询价
COMUS
23+
NA/
13000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
Assemtech
2308+
218791
一级代理,原装正品,公司现货!
询价
GC/国芯
21+ROHS
DIP-8 / SOP-8
56165
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
2000
原装现货
询价
上海国芯
21+
SOP8
238
全新原装鄙视假货15118075546
询价
更多GC373供应商 更新时间2024-6-18 16:18:00