Description

The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (

Features

• HIGH PERFORMANCE E2CMOS® TECHNOLOGY

— 4 ns Maximum Propagation Delay

— Fmax = 250 MHz

— 3.5 ns Maximum from Clock Input to Data Output

— UltraMOS® Advanced CMOS Technology

• ACTIVE PULL-UPS ON ALL PINS

• COMPATIBLE WITH STANDARD 22V10 DEVICES

— Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices

• 50 to 75 REDUCTION IN POWER VERSUS BIPOLAR

— 90mA Typical Icc on Low Power Device

— 45mA Typical Icc on Quarter Power Device

• E2 CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100 Tested/100 Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

• TEN OUTPUT LOGIC MACROCELLS

— Maximum Flexibility for Complex Logic Designs

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100 Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

GAL22V10D-25LJNI属于集成电路（IC） > CPLD（复杂可编程逻辑器件）。莱迪思半导体制造生产的GAL22V10D-25LJNICPLD（复杂可编程逻辑器件）CPLD 是用于执行逻辑运算和信息处理的用户可配置集成电路产品；与 PLD 或 PAL 器件相比，这些器件具有更高级别的功能（即更多的逻辑门），但低于 FPGA。CPLD 通常包含非易失性配置存储器，支持直接在器件上存储和保留用户所需的配置，并在器件断电时仍可保留这些信息。