首页 >GAL22V10D-15LPLAT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
HighPerformanceE2CMOSPLDGenericArrayLogic Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
GAL22V10DeviceDatasheet Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
AllDevicesDiscontinued | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice | ||
ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet. Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl | LatticeLattice Semiconductor Corporation 莱迪思半导体 | Lattice |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LATTICE |
16+ |
原厂封装 |
1155 |
原装现货假一罚十 |
询价 | ||
LATTICE |
13+ |
DIP-24 |
24 |
特价热销现货库存 |
询价 | ||
lattice |
dc07 |
原厂封装 |
13 |
INSTOCK:15/tube/dip24 |
询价 | ||
原厂 |
13+ |
IC |
1 |
普通 |
询价 | ||
LATTICE |
21+ |
DIP24 |
120 |
原装现货假一赔十 |
询价 | ||
LATTICE |
22+ |
DIP24 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
Lattice Semiconductor Corporat |
22+ |
24PDIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Lattice Semiconductor Corporat |
21+ |
24PDIP |
13880 |
公司只售原装,支持实单 |
询价 | ||
LATTICE |
19+ 20+ |
DIP24 |
32350 |
深圳存库原装现货 |
询价 | ||
收购IC |
1525+ |
DIP |
5083 |
长期现金收购原装IC |
询价 |
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