| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELMOSFET APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical21pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical21pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactor correctionandswitchingmodepowersupplies. FEATURES •VDSS=600V, | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactor correctionandswitchingmodepowersupplies. FEATURES •VDSS=600V, | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-Channel600V(D-S)PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledriverequirement •Improvedgate,avalancheanddynamicdV/dtruggedness •Fullycharacterizedcapacitanceandavalanchevoltageandcurrent APPLICATIONS •Switchmodepowersupply(SMPS) •Uninterruptiblepowersupply •Highspeedpowerswit | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
600VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelUniFETllMOSFET600V,6.5A,1.25 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Excellentpackageforgoodheatdissipation. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelUniFETllMOSFET600V,6.5A,1.25 | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET600V,7A,1.15(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,7.0A,1.15(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,7A,1.15(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,7A,1.15(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
06+07+ |
TO252 |
75 |
询价 | |||
HARRIS |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 | ||
FAIRCHILD |
21+ |
TO-252 |
1484 |
原装现货假一赔十 |
询价 | ||
FAIRCHILD |
21+ |
TO-252 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
FAIRCHILD |
1932+ |
TO-252 |
247 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO252 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
HARRIS/哈里斯 |
23+ |
TO252 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
FAIRCHILD |
23+ |
TO-252 |
11000 |
专业优势供应 |
询价 | ||
FAIRCHI |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VB |
2019 |
P-TO263-3-2 |
55000 |
绝对原装正品假一罚十! |
询价 |
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