首页 >G2310B>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

C2310

TCXOEFCStandardStandardSurfaceMountPackageLowPhaseNoiseoptionLowProfile

Features EFCStandard StandardSurfaceMountPackage LowPhaseNoiseoption LowProfile TypicalApplications PCSBaseStations LandMobileRadio CellularTelephony RadiointheLocalLoop

Vectron

VECTRON

CDCVF2310

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州仪器美国德州仪器公司

CDCVF2310

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州仪器美国德州仪器公司

CDCVF2310

High-PerformanceClockBuffer

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

CDCVF2310-EP

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

CDCVF2310MPWEP

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

CDCVF2310MPWREP

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

CDCVF2310PW

High-PerformanceClockBuffer

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

CDCVF2310PW

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州仪器美国德州仪器公司

CDCVF2310PWR

2.5-VTO3.3-VHIGH-PERFORMANCECLOCKBUFFER

TITexas Instruments

德州仪器美国德州仪器公司

CDCVF2310PWR

High-PerformanceClockBuffer

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

CEH2310

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,6.2A,RDS(ON)=33mΩ@VGS=10V. RDS(ON)=38mΩ@VGS=4.5V. RDS(ON)=55mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEH2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,6.1A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=45mW@VGS=2.5V. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2310

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CES2310L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM2310PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.8Ampere FEATURE ​​​​​​​*Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicatio

CHENMKOCHENMKO

CHENMKO

CJ2310

SOT-23Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJ2310

N-ChannelMOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

CM2310

T-13/4Bi-PinBase(.125)

CMLCML

CML

供应商型号品牌批号封装库存备注价格
GTM
2022+
SOT-23
40000
原厂代理 终端免费提供样品
询价
GTM
2022+
SOT-23
30000
进口原装现货供应,原装 假一罚十
询价
IR
02+
TO-3
152
询价
IR
21+ROHS
TO-3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+
TO-3
8000
只做原装现货
询价
GTM
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
GTM
2022
SOT-23
80000
原装现货,OEM渠道,欢迎咨询
询价
GTM
2122+
SOT23-3
12007
全新原装正品,优势渠道,价格美丽可做含税
询价
TI
2023+
TSSOP14
3750
全新原厂原装产品、公司现货销售
询价
GTM
15+
SOT-23
8000
现货-ROHO
询价
更多G2310B供应商 更新时间2024-5-19 14:02:00