零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PNPSiliconDigitalTransistor PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PNPSiliconDigitalTransistor PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
PNPSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit) PNPSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinresistor(R1=10kΩ,R2=10kΩ) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSILICONTRANSISTORPOWERLINERARANDSWITCHINGAPPLICATIONS NPNSILICONTRANSISTOR POWERLINERARANDSWITCHINGAPPLICATIONS BD181,BD182andBD183aresiliconNPNtransistorsintendedforawidevariety ofhighpowerapplications.Typicalapplicationsincludepowerswitchingcircuits, audioamplifiers,solenoiddrivers,andseriesandshuntregulators. | COMSET Comset Semiconductor | COMSET | ||
NPNSILICONTRANSISTORPOWERLINERARANDSWITCHINGAPPLICATIONS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNSILICONTRANSISTORPOWERLINERARANDSWITCHINGAPPLICATIONS | COMSET Comset Semiconductor | COMSET | ||
TRANZYSTORY [ADVANIOERLIKON] TELEVISION/VIDEODEVICES I.F./R.F.amplifiersandoscillators V.H,F./U.H.F.TVtuningdevices | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto28mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto28mA •fT=8GHz F=1.2dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto28mA •fT=8GHz F=1.2dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconNPNPlanarRFTransistor Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SiliconNPNPlanarRFTransistor Features ●Lowpowerapplications ●Lownoisefigure ●HightransitionfrequencyfT=8GHz Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackage withvisibleleads •QualificationreportaccordingtoAEC-Q101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号:
G183
- 制造商:
IDEA
- 制造商全称:
IDEA
- 功能描述:
T-1,(3-mm) Round, Tri-level PCB Mount LED Indicator
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDEA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INTEL |
22+ |
LGA |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 | ||
INTEL/英特尔 |
13+ |
SMD |
190 |
INTEL/英特尔 G1840 SR1VK-YGD SMD 13+ |
询价 | ||
INTEL/英特尔 |
21+ROHS |
BGA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
BELSTEWAR |
1922+ |
NA |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
BELSTEWAR |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
BELSTEWAR |
2122+ |
NA |
33000 |
原装进口,优势渠道,样品可出,一片起送 |
询价 | ||
BELSTEWAR |
2023+ |
NA |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
BELSTEWAR |
23+ |
NA/ |
132 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 |
相关规格书
更多- G183B/3G5
- G1849HEX
- G185BA
- G185XW01 V1
- G18-88ND-051
- G18AH
- G18AH-RO
- G18AP-RO
- G-18AV
- G18K0301
- G18K0402KEU
- G18K0601G
- G18K0641
- G18K0801CEU
- G18KP-YA-RO
- G18KP-YC
- G18L04S041BEU
- G18M06343EU
- G18P04H
- G18P475
- G18P500E
- G190EAN01.1
- G190EG02 V0
- G190ETN01.2
- G191
- G19-18
- G191C
- G191C21R0A0
- G191D00P000
- G191DB1P002
- G19212HHCY060
- G1922BH040N
- G1922BH060R
- G1922BS040N
- G192B
- G1931BH040016N
- G1931BH080020N
- G1931BH100045N
- G1931BH160060N
- G1934B05016N
- G19515SMASI
- G195BI15
- G195MI25
- G195NI20
- G195SMI
相关库存
更多- G18-48ND-051
- G1856HEX
- G185XW01 V0
- G1872M
- G18AA1-14.250MHZ-T
- G-18AH
- G18AP
- G18AV
- G18AV-RO
- G18K0401Y
- G18K0601EU
- G18K0631EU
- G18K0801
- G18KP-YA
- G18KP-YB
- G18L0401EU
- G18L0501
- G18P03H
- G18P474
- G18P476
- G190EAN01.0
- G190EG01 V1
- G190EG02 V1
- G190SF01 V0
- G191-5
- G191B
- G191C00R0A0
- G191D
- G191DB1P000
- G19-1JJT-038
- G19212HHCY080
- G1922BH050R
- G1922BH100R
- G1922BS040R
- G1931BH040012N
- G1931BH050016N
- G1931BH100030N
- G1931BH120040N
- G1931BH200100N
- G19512NS
- G195BI
- G195BI20
- G195NI
- G195NI6
- G1961M