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BA591WS

BANDSWITCHINGDIODE

Features •VerysmallplasticSMDpackage •Lowdiodecapacitance •Lowdiodeforwardresistance •Smallinductance

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BF591

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES •Lowcurrent(max.150mA) •Highvoltage(max.210V). APPLICATIONS •Telephonesystems.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG591

NPN7GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplastic,4-pinSOT223package. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrange

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ591

NPN7GHzwidebandtransistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFQ591

SiliconNPNRFTransistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BFQ591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ591

NPN7GHzwidebandtransistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFQ591

iscSiliconNPNRFTransistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFQ591

NPN7GHzwidebandtransistor

DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrangesuchasMATV orCATVamplifiersandR

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

C591

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

POWERBOX

Powerbox manufactures

CL-591S

LEDForFlashLightSource

LEDForFlashLightSource ●Highoutputtypewithreflectorequipped.

CITIZEN

Citizen Electronics Co., Ltd

CMLT591E

PNPLowVCE(Sat)1.0Amptransistor

DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59

CentralCentral Semiconductor Corp

美国中央半导体

CMMT591

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor

CDIL

CDIL

CMMT591

SOT-23-PowerTransistorandDarlingtons

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

CMMT591A

PNPEPITAXIALPLANARSILICONTRANSISTOR

PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A

CDIL

CDIL

CMPT591

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59.

CentralCentral Semiconductor Corp

美国中央半导体

CMPT591E

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59.

CentralCentral Semiconductor Corp

美国中央半导体

CP591

SmallSignalTransistorPNP-Amp/SwitchTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl-

CentralCentral Semiconductor Corp

美国中央半导体

CP591V

SmallSignalTransistorPNP-Amp/SwitchTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness7.1MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl

CentralCentral Semiconductor Corp

美国中央半导体

产品属性

  • 产品编号:

    FZT591TA

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    600mV @ 100mA,1A

  • 电流 - 集电极截止(最大值):

    100nA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 500mA,5V

  • 频率 - 跃迁:

    150MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-261-4,TO-261AA

  • 供应商器件封装:

    SOT-223-3

  • 描述:

    TRANS PNP 60V 1A SOT223-3

供应商型号品牌批号封装库存备注价格
Diodes Incorporated
24+
TO-261-4,TO-261AA
30000
晶体管-分立半导体产品-原装正品
询价
DIODES
ROHS全新原装
原厂原包原封△
2000
原装代理经销特价原装现货小批量支持QQ350053121
询价
DIODES
18+
SOT-223
36000
一级代理/全新现货/长期供应!
询价
DIODES/美台
2019+
SOT223
78550
原厂渠道 可含税出货
询价
ZETEX
2024+实力库存
SOT-223
5000
只做原厂渠道 可追溯货源
询价
DIODES/美台
23+
SOT223
918000
明嘉莱只做原装正品现货
询价
DIODES/美台
20+
SOT-223
120000
原装正品 可含税交易
询价
DIODES/美台
SOT223
7906200
询价
DIODES/美台
21+
NA
1000
全新原装现货
询价
DIODES(美台)
23+
SOT-223-4
8498
支持大陆交货,美金交易。原装现货库存。
询价
更多FZT591TA供应商 更新时间2024-6-6 17:08:00