FTM-3112C-SLG资料datasheet下载原装现货第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CBC3112	文件：212.56 Kbytes Page：1 Pages	AmbiqAM1803RTCPowerBackupwithEnerChipBattery	CYMBETCymbet Corporation Cymbet Corporation	CYMBET
CBC3112	文件：202.48 Kbytes Page：1 Pages	MicrochipMDP79410RTCPowerBackupwithEnerChipBattery	CYMBETCymbet Corporation Cymbet Corporation	CYMBET
CBC3112	文件：1.04547 Mbytes Page：16 Pages	EnerChipCCwithIntegratedPowerManagement	CYMBETCymbet Corporation Cymbet Corporation	CYMBET
CBC3112	文件：288.94 Kbytes Page：3 Pages	EnerChipCCBackupPowerforEpsonRX-8564Real-TimeClock	CYMBETCymbet Corporation Cymbet Corporation	CYMBET
CBC3112	文件：205.64 Kbytes Page：1 Pages	EpsonRX-8564RTCPowerBackupwithEnerChipBattery	CYMBETCymbet Corporation Cymbet Corporation	CYMBET
CEB3112	文件：523.69 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED3112	文件：441.18 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF3112	文件：523.69 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM3112	文件：426.43 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,11.9A,RDS(ON)=11mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP3112	文件：523.69 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU3112	文件：441.18 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEZC3112	文件：946.09 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,37.8A,RDS(ON)=9.7mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CM3112	文件：277.42 Kbytes Page：14 Pages	150mA/1.2VCMOSLDORegulator ProductDescription TheCM3112-12isalowquiescentcurrent(90uA)regulatorthatdeliversupto150mAofloadcurrentatafixed1.2Voutput.Allthenecessarycircuitryhasbeenincludedtodelivera50Ωpowergoodsignal(opendrain)whichremainsfor5msaftertheoutputhasexceeded90(typ	CALMIRCO California Micro Devices Corp	CALMIRCO
CPH3112	文件：54.05 Kbytes Page：5 Pages	DC/DCConverterApplications DC/DCConverterApplications Features •AdoptionofMBITprocesses. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.9mm). •Highallowablepowerdissipation. Applications •Relaydriv	SANYOSanyo 三洋三洋电机株式会社	SANYO
DMN3112S	文件：185.07 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance: ◾57mΩ@VGS=10V ◾112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(	DIODESDiodes Incorporated 达尔科技	DIODES
DMN3112S	文件：144.85 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance: 57mΩ@VGS=10V 112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh	ZPSEMI ZP Semiconductor	ZPSEMI
DMN3112SSS	文件：194.07 Kbytes Page：4 Pages	SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •57mΩ@VGS=10V •112mΩ@VGS=4.5V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note4) •QualifiedtoAEC-Q101StandardsforHi	DIODESDiodes Incorporated 达尔科技	DIODES
DS3112	文件：585.75 Kbytes Page：135 Pages	TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux	Dallas Dallas Semiconductor Corp.	Dallas
DS3112	文件：2.38627 Mbytes Page：133 Pages	TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux	MaximMaximIntegrated 美信半导体	Maxim
DS3112+	文件：2.38627 Mbytes Page：133 Pages	TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux	MaximMaximIntegrated 美信半导体	Maxim

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市诚利顺电子科技有限公司	FTM-3112C-SLG	FIBERXON	22+	SMD	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
贸泽芯城（深圳）电子科技有限公司	FTM-311XC-L10DG	飞博创	21+ROHS		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳廊盛科技有限公司	FTM-311XC-L10DG	飞博创	22+	原厂封装	50000	只做原装正品,假一罚十,欢迎咨询	询价
深圳市美思瑞电子科技有限公司	FTM-3125C-L40	飞博创	22+	N/A	12245	现货,原厂原装假一罚十!	询价
深圳市胜彬电子有限公司	FTM-3127C-SL2IG	SOURCE	22+	fiber	8000	原装正品支持实单	询价
深圳市佳鑫美电子科技有限公司	FTM-3128C-L40	FIBERON	22+	mokuai	2679	原装优势!绝对公司现货!可长期供货!	询价
深圳市能元时代电子有限公司	FTM-3128C-L40	FIBERON	23+	mokuai	64147	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳兆威电子有限公司	FTM-3128C-SL15G	FIBERXON	23+	SUMITOMO	5004	全新原装现货特价/假一罚十	询价
深圳市艾宇特电子科技有限公司	FTM-3128C-SL15G	FIBERXON	2048+	SUMITOMO	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市航宇科工半导体有限公司	FTM-3128C-SL15G	FIBERXON	22+	SUMITOMO	6792	全新原装现货特价热卖	询价

更多FTM-3112C-SLG供应商更新时间2024-6-14 11:03:00

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