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FSS23A0R

9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS23A0R1

9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS23A0R3

9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS23A0R4

9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL23A0D

6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL23A0R

6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS23A0D

9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYE23A0D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYE23A0R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FSS23A0R

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
F
06+
原厂原装
4293
只做全新原装真实现货供应
询价
F
23+
65480
询价
FAGOR
23+
NA
6716
专做原装正品,假一罚百!
询价
FABRIMEX
24+25+/26+27+
车规-电源模块
3280
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
SANYO
24+
SOP8
5000
只做原装公司现货
询价
23+
N/A
46280
正品授权货源可靠
询价
SANYO/三洋
23+
SOP-8
24190
原装正品代理渠道价格优势
询价
SANYO/三洋
21+
SOP-8
6796
优势供应 实单必成 可13点增值税
询价
SANYO/三洋
23+
SOP8
50000
全新原装正品现货,支持订货
询价
SANYO/三洋
22+
SOP-8
18000
原装正品
询价
更多FSS23A0R供应商 更新时间2024-5-23 16:37:00