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FSL923A0D

5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL923A0D1

5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL923A0D3

5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL923A0R

5A,-200V,0.670Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS923A0D

7A,-200V,0.650Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS923A0R

7A,-200V,0.650Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYE923A0D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYE923A0R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FSL923A0D

  • 制造商:

    INTERSIL

  • 制造商全称:

    Intersil Corporation

  • 功能描述:

    5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

供应商型号品牌批号封装库存备注价格
FSC
23+
TO-263
4569
专业优势供应
询价
IR
2018+
TO262
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
23+
原厂封装
11888
专做原装正品,假一罚百!
询价
-
TO-262
265209
假一罚十原包原标签常备现货!
询价
-
23+
TO-262
50000
全新原装正品现货,支持订货
询价
IR
22+
TO262
6000
终端可免费供样,支持BOM配单
询价
IR
23+
29178
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
-
23+
NA/
3300
原装现货,当天可交货,原型号开票
询价
IR
23+
TO262
8000
只做原装现货
询价
TOKO
22+
SMD
2650
原装优势!绝对公司现货
询价
更多FSL923A0D供应商 更新时间2024-5-31 15:29:00