FSL214D3中文资料PDF规格书
FSL214D3规格书详情
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 1.5A, 250V, rDS(ON) = 2.30Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
产品属性
- 型号:
FSL214D3
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Fairich |
2020+ |
SOP7 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
HARRIS |
23+ |
CAN-3 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
Fairchild/ON |
21+ |
7LSOP |
13880 |
公司只售原装,支持实单 |
询价 | ||
FAIRCHI |
2017+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
询价 | ||
TOKO |
23+ |
SMD |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ONSemiconductor |
23+ |
7-LSOP |
66800 |
优势价格原装正品 |
询价 | ||
TOKO |
22+23+ |
SMD |
40893 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
SOP-7 |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
HARRIS |
CAN-3 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
HARRIS |
24+25+/26+27+ |
CAN-3 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |