FSJ055D中文资料PDF规格书
FSJ055D规格书详情
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
• 70A, 60V, rDS(ON) = 0.012Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 6.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
产品属性
- 型号:
FSJ055D
- 制造商:
INTERSIL
- 制造商全称:
Intersil Corporation
- 功能描述:
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
H |
18+ |
TO-220 |
185 |
进口原装正品优势供应QQ3171516190 |
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23+ |
TO-220 |
66800 |
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21+ |
TO-220 |
645 |
航宇科工半导体-央企合格优秀供方! |
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SAC |
24+23+ |
QFP |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
FSK |
SMD-4 |
35560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
H |
QQ咨询 |
TO-220 |
64 |
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询价 | ||
SENSITRO |
24+25+/26+27+ |
TO-59.高频管 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ISL |
23+ |
65480 |
询价 | ||||
THOMASBETTS/ANSLEY |
新 |
3455 |
全新原装 货期两周 |
询价 | |||
ISL |
05+ |
原厂原装 |
4302 |
只做全新原装真实现货供应 |
询价 |