FK18SM-10

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.50Ω ●ID.......................................................................................

FK18SM-10

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.50Ω ●ID.......................................................................................

FK18SM-10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

FS18SM-10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FS18SM-10

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.40Ω ●ID.........................................................................................18A APPLICATION SM

FS18SM-10

MITSUBISHINchPOWERMOSFET

●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.40Ω ●ID.........................................................................................18A APPLICATION SM

FS18SM-10

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX)..............................................................0.40Ω ●ID.......................................................................................