| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PChannelPowerMOSFET | GSGGunter Seniconductor GmbH. Gunter Seniconductor GmbH. | GSG | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18) BVDSS-200V RDS(on)0.80Ω ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFET VDSS-200V ID(cont)-3.6A RDS(on)0.825Ω FEATURES •SURFACEMOUNT •SMALLFOOTPRINT •HERMETICALLYSEALED •DYNAMICdv/dtRATING •AVALANCHEENERGYRATING •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) 200V,P-CHANNEL TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A) 200Volt,0.8Ω,RADHARDHEXFET InternationalRectifier’sP-ChannelRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas105Rads(Si).Underidenticalpre-andpost-radiationtestconditions,Internationa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
M&G(晨光文具) |
21+ |
6947503731359 |
4600 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
Amphenol RF |
2308+ |
259196 |
一级代理,原装正品,公司现货! |
询价 | |||
AMPHENOL-安费诺 |
24+25+/26+27+ |
车规-连接器- |
9358 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CJ/CHUJHI |
15000 |
全新原装现货 样品可售 |
询价 | ||||
TOSHIBA东芝 |
24+23+ |
SOT89 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
YAG |
1535+ |
1000 |
询价 | ||||
YAG |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
YAGEO(VA) |
22+ |
NA |
5000 |
全新原装品牌专营 |
询价 | ||
isc |
2024 |
TO-3 |
150 |
国产品牌isc,可替代原装 |
询价 | ||
FINISAR |
19+ |
MODL |
20000 |
4 |
询价 |
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