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FRF

Circular Commercial Aircraft Military Aircraft

ITTITT Industries

ITT工业

FRF10A40

FRD - Low Forward Voltage Drop

FEATURES *FullyMoldedIsolation *DualDiodes–AnodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

NIECNihon Inter Electronics Corporation

Nihon Inter Electronics Corporation

FRF1201CT

FAST RECOVERY RECTIFIERS

Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

FRF1202CT

FAST RECOVERY RECTIFIERS

Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

FRF1204CT

FAST RECOVERY RECTIFIERS

Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

FRF1206CT

FAST RECOVERY RECTIFIERS

Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

FRF1208CT

FAST RECOVERY RECTIFIERS

Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

FRF1210CT

FAST RECOVERY RECTIFIERS

Features Glasspassivatedchipjunctions Lowreversecurrentoperation LeadfreeincompliancewithEURoHS 2011/65/EUdirective HighJunctionTemperature HighForwardSurgeCapability Fastrecoverytimeforswitching

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

FRF150D

25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF150H

25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF150R

25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF250D

23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs

Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma    -MeetsPre-RadSpecificationsto100KRAD(Si)    -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si)    -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF250H

23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs

Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma    -MeetsPre-RadSpecificationsto100KRAD(Si)    -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si)    -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF250R

23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs

Features •23A,200V,RDS(on)=0.115Ω •SecondGenerationRadHardMOSFETResultsFromNewDesignConcepts •Gamma    -MeetsPre-RadSpecificationsto100KRAD(Si)    -DefinedEndPointSpecsat300KRAD(Si)and1000KRAD(Si)    -PerformancePermitsLimitedUseto3000KRAD(Si) •Gamma

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF254D

17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF254H

17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF254R

17A, 250V, 0.185 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF450D

9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF450H

9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRF450R

9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    FRF

  • 制造商:

    ITT

  • 制造商全称:

    ITT Industries

  • 功能描述:

    Circular Commercial Aircraft Military Aircraft

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ISL
05+
原厂原装
4283
只做全新原装真实现货供应
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TO220F
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9768
优势库存
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NIEC
16+
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4000
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NIEC
24+
TO-220F
5000
全现原装公司现货
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GK
ITO-220A
568923
提供BOM表配单只做原装货值得信赖
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MPDETROIT
5
全新原装 货期两周
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NIEC
22+23+
TO220F
14095
绝对原装正品全新进口深圳现货
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23+
N/A
90550
正品授权货源可靠
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更多FRF供应商 更新时间2024-5-21 16:02:00