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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQU1N60	文件：543.8 Kbytes Page：9 Pages	600V N-Channel MOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU1N60	文件：549.28 Kbytes Page：9 Pages	600V N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU1N60C	文件：640.5 Kbytes Page：9 Pages	600V N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU1N60C	文件：824.93 Kbytes Page：8 Pages	600V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQU1N60C	文件：557.93 Kbytes Page：9 Pages	N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU1N60C	文件：557.93 Kbytes Page：9 Pages	N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU1N60C	文件：330.62 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQU1N60CTU	文件：557.93 Kbytes Page：9 Pages	N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQU1N60C	文件：758.35 Kbytes Page：9 Pages	600V N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
1N60	文件：71.1 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N60	文件：197.55 Kbytes Page：4 Pages	SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi	LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司	Littelfuse
1N60	文件：80.99 Kbytes Page：2 Pages	SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司	FORMOSA
1N60	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
1N60	文件：143.99 Kbytes Page：8 Pages	1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：310.86 Kbytes Page：2 Pages	GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione	DAESAN Daesan Electronics Corp.	DAESAN
1N60	文件：51.09 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N60	文件：239.88 Kbytes Page：2 Pages	SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: HighReliability LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching	WEITRONWEITRON 威堂電子科技	WEITRON
1N60	文件：127.55 Kbytes Page：1 Pages	600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：138.98 Kbytes Page：2 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：72.86 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG

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详细参数

型号：
FQU1N60
制造商：
FAIRCHILD
制造商全称：
Fairchild Semiconductor
功能描述：
600V N-Channel MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	FQU1N60	国产替代	2010	TO251-3	50000	只做全新原装诚信经营现货长期供应	询价
绿盛电子(香港)有限公司	FQU1N60	FSC	2015+	TO251-3	19898	专业代理原装现货,特价热卖!	询价
深圳市益百分电子有限公司	FQU1N60	国产替代	2012	TO251-3	50000	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	FQU1N60	FAIRCHIL	08+(pbfree)	TO-251	8866		询价
深圳市博浩通科技有限公司	FQU1N60	FAIRCHILD	23+	TO-251	6680	全新原装优势	询价
深圳市利加科技有限公司	FQU1N60	FAIRCHILD	16+	TO-251	10000	全新原装现货	询价
深圳市鑫宇杨电子科技有限公司	FQU1N60	FAIRCHILD	2020+	TO-251	210000	100%进口原装正品公司现货库存	询价
深圳市永贝尔科技有限公司	FQU1N60	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市华斯顿科技有限公司	FQU1N60	FSC	22+23+	TO-251	16781	绝对原装正品全新进口深圳现货	询价
深圳诚思涵科技有限公司	FQU1N60	FSC	18+	TO-251	85600	保证进口原装可开17%增值税发票	询价

更多FQU1N60供应商更新时间2024-6-18 10:48:00

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