IXFM13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

IXTC13N50

PowerMOSFETISOPLUS220

PowerMOSFETISOPLUS220TM ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •SiliconchiponDirect-Copper-Bond substrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXTC13N50

iscN-ChannelMOSFETTransistor

JCS13N50C

N-CHANNELMOSFET

JCS13N50CC-O-CA-N-B

N-CHANNELMOSFET

JCS13N50CC-O-C-N-B

N-CHANNELMOSFET

JCS13N50CT

Highfrequencyswitchingmodepowersupply

JCS13N50CT-O-C-N-B

Highfrequencyswitchingmodepowersupply

JCS13N50FC-O-F-N-B

N-CHANNELMOSFET

JCS13N50FT

N-CHANNELMOSFET

JCS13N50FT-O-F-N-B

N-CHANNELMOSFET