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FQB6N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQB6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQI6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N80C

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N80C

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP6N80C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP6N80C

N-ChannelQFET짰MOSFET800V,5.5A,2.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N80C

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N80C

N-ChannelQFET짰MOSFET800V,5.5A,2.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N80C

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N80CT

N-ChannelQFET짰MOSFET800V,5.5A,2.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF6N80T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.3A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

HM6N80K

Powerswitchcircuitofadaptorandcharger

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

IXTH6N80

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTH6N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH6N80A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH6N80A

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTM6N80

N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    FQP6N80_JEDEC

  • 制造商:

    Fairchild

  • 功能描述:

    800V/6A N-CH MOSFET

供应商型号品牌批号封装库存备注价格
15+
TO220
700
现货-ROHO
询价
FSC
23+
SMA
3600
全新现货
询价
FSC
23+
TO-220
9526
询价
仙童
06+
TO-220
5000
原装库存
询价
FSC
23+
TO-220
5500
现货,全新原装
询价
FSC
23+
TO-220
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
原厂
23+
TO-220
5000
原装正品,假一罚十
询价
FSC
2020+
TO-220
1000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
FAIRCHILD
17+
TO-220
1526
全新原装环保
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多FQP6N80_JEDEC供应商 更新时间2024-6-6 15:00:00