FQI50N06L中文资料PDF规格书
FQI50N06L规格书详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100 Avalanche Tested
• 175°C Maximum Junction Temperature Rating
产品属性
- 型号：
FQI50N06L
- 功能描述：
MOSFET 60V N-Channel QFET Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
国产替代 |
2010+ |
TO-220 |
100000 |
全新原装进口自己库存优势 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FAIRCHILD/仙童 |
24+ |
TO262 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
FAIRCHILD/仙童 |
21+ |
TO262 |
1139 |
询价 | |||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-262(I2PAK) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
onsemi(安森美) |
23+ |
I2PAK(TO262) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FSC |
2016+ |
ROHS |
5632 |
只做进口原装正品!现货或者订货一周货期!只要要网上有 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO262 |
360000 |
进口原装房间现货实库实数 |
询价 |
