FQI12N50中文资料PDF规格书
FQI12N50规格书详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge.
Features
• 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V
• Low gate charge ( typical 39 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
产品属性
- 型号:
FQI12N50
- 功能描述:
MOSFET N-CH 500V 12.1A I2PAK
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
QFET™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FSC |
06+ |
TO-220-3 |
85 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FSC |
2020+ |
TO-220- |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
FAIRCHILD |
2023+ |
SMD |
6433 |
安罗世纪电子只做原装正品货 |
询价 | ||
FAIRC |
2020+ |
TO-262(I2PAK) |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
FSC |
21+ |
TO-220-3 |
85 |
原装现货假一赔十 |
询价 | ||
onsemi(安森美) |
23+ |
I2PAK(TO262) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-262 |
8866 |
询价 | |||
harris |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
ON-安森美 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
仙童 |
06+ |
TO-262 |
2500 |
原装 |
询价 |